JPS5598868A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS5598868A
JPS5598868A JP675679A JP675679A JPS5598868A JP S5598868 A JPS5598868 A JP S5598868A JP 675679 A JP675679 A JP 675679A JP 675679 A JP675679 A JP 675679A JP S5598868 A JPS5598868 A JP S5598868A
Authority
JP
Japan
Prior art keywords
gate
fet
layer
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP675679A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213826B2 (enrdf_load_stackoverflow
Inventor
Hideki Hayashi
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP675679A priority Critical patent/JPS5598868A/ja
Publication of JPS5598868A publication Critical patent/JPS5598868A/ja
Publication of JPH0213826B2 publication Critical patent/JPH0213826B2/ja
Granted legal-status Critical Current

Links

JP675679A 1979-01-23 1979-01-23 Insulated gate type field effect semiconductor device Granted JPS5598868A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP675679A JPS5598868A (en) 1979-01-23 1979-01-23 Insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP675679A JPS5598868A (en) 1979-01-23 1979-01-23 Insulated gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5598868A true JPS5598868A (en) 1980-07-28
JPH0213826B2 JPH0213826B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=11647023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP675679A Granted JPS5598868A (en) 1979-01-23 1979-01-23 Insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598868A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654959A (en) * 1981-07-15 1987-04-07 Sharp Kabushiki Kaisha Method for the manufacture of thin film transistors
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654959A (en) * 1981-07-15 1987-04-07 Sharp Kabushiki Kaisha Method for the manufacture of thin film transistors
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5294555A (en) * 1982-04-13 1994-03-15 Seiko Epson Corporation Method of manufacturing thin film transistor and active matrix assembly including same
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays

Also Published As

Publication number Publication date
JPH0213826B2 (enrdf_load_stackoverflow) 1990-04-05

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