JPS5596681A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5596681A
JPS5596681A JP407979A JP407979A JPS5596681A JP S5596681 A JPS5596681 A JP S5596681A JP 407979 A JP407979 A JP 407979A JP 407979 A JP407979 A JP 407979A JP S5596681 A JPS5596681 A JP S5596681A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
gate
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP407979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6151432B2 (enrdf_load_stackoverflow
Inventor
Satoshi Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP407979A priority Critical patent/JPS5596681A/ja
Publication of JPS5596681A publication Critical patent/JPS5596681A/ja
Publication of JPS6151432B2 publication Critical patent/JPS6151432B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP407979A 1979-01-17 1979-01-17 Method of fabricating semiconductor device Granted JPS5596681A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP407979A JPS5596681A (en) 1979-01-17 1979-01-17 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP407979A JPS5596681A (en) 1979-01-17 1979-01-17 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS5596681A true JPS5596681A (en) 1980-07-23
JPS6151432B2 JPS6151432B2 (enrdf_load_stackoverflow) 1986-11-08

Family

ID=11574780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP407979A Granted JPS5596681A (en) 1979-01-17 1979-01-17 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5596681A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216559A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 酸化膜の形成方法
JPS6271245A (ja) * 1986-09-12 1987-04-01 Toshiba Corp 半導体装置の製造方法
US6391701B1 (en) 1999-05-18 2002-05-21 Nec Corporation Semiconductor device and process of fabrication thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60216559A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 酸化膜の形成方法
JPS6271245A (ja) * 1986-09-12 1987-04-01 Toshiba Corp 半導体装置の製造方法
US6391701B1 (en) 1999-05-18 2002-05-21 Nec Corporation Semiconductor device and process of fabrication thereof

Also Published As

Publication number Publication date
JPS6151432B2 (enrdf_load_stackoverflow) 1986-11-08

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