JPS5595410A - Mis field effect type transistor amplifier circuit - Google Patents

Mis field effect type transistor amplifier circuit

Info

Publication number
JPS5595410A
JPS5595410A JP125879A JP125879A JPS5595410A JP S5595410 A JPS5595410 A JP S5595410A JP 125879 A JP125879 A JP 125879A JP 125879 A JP125879 A JP 125879A JP S5595410 A JPS5595410 A JP S5595410A
Authority
JP
Japan
Prior art keywords
amplifier
fetqn3
amplifier circuit
field effect
type transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP125879A
Other languages
Japanese (ja)
Inventor
Kuniharu Uchimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP125879A priority Critical patent/JPS5595410A/en
Publication of JPS5595410A publication Critical patent/JPS5595410A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices

Abstract

PURPOSE:To lower the output impedance of a MISFET amplifier circuit by providing negative feedback by forming a fixed circuit. CONSTITUTION:The gate of p-type MISFETQP1 is connected to signal input terminal 3 and while its drain is connected to power terminal 1, its source is also connected to the input side of phase inversion amplifier 12. The output of this amplifier 12 is connected to signal output terminal 4 and also to the source of n-type MISFET QN3, whose drain is further connected to the input side of amplifier 12. Then, the gate of FETQN3 is connected to power terminal 2 to form a negative feedback loop to FETQP1 and amplifier 12 by way of FETQN3. The above-mentioned constitution provides reduction in output impedance. Additionally, the same effect can be obtained by reversing the channel types of FETQP1 and FETQN3 or by connecting sources and drains reversely.
JP125879A 1979-01-12 1979-01-12 Mis field effect type transistor amplifier circuit Pending JPS5595410A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP125879A JPS5595410A (en) 1979-01-12 1979-01-12 Mis field effect type transistor amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP125879A JPS5595410A (en) 1979-01-12 1979-01-12 Mis field effect type transistor amplifier circuit

Publications (1)

Publication Number Publication Date
JPS5595410A true JPS5595410A (en) 1980-07-19

Family

ID=11496425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP125879A Pending JPS5595410A (en) 1979-01-12 1979-01-12 Mis field effect type transistor amplifier circuit

Country Status (1)

Country Link
JP (1) JPS5595410A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110641A (en) * 1977-06-27 1978-08-29 Honeywell Inc. CMOS voltage comparator with internal hysteresis

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110641A (en) * 1977-06-27 1978-08-29 Honeywell Inc. CMOS voltage comparator with internal hysteresis

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