JPS5595410A - Mis field effect type transistor amplifier circuit - Google Patents
Mis field effect type transistor amplifier circuitInfo
- Publication number
- JPS5595410A JPS5595410A JP125879A JP125879A JPS5595410A JP S5595410 A JPS5595410 A JP S5595410A JP 125879 A JP125879 A JP 125879A JP 125879 A JP125879 A JP 125879A JP S5595410 A JPS5595410 A JP S5595410A
- Authority
- JP
- Japan
- Prior art keywords
- amplifier
- fetqn3
- amplifier circuit
- field effect
- type transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To lower the output impedance of a MISFET amplifier circuit by providing negative feedback by forming a fixed circuit. CONSTITUTION:The gate of p-type MISFETQP1 is connected to signal input terminal 3 and while its drain is connected to power terminal 1, its source is also connected to the input side of phase inversion amplifier 12. The output of this amplifier 12 is connected to signal output terminal 4 and also to the source of n-type MISFET QN3, whose drain is further connected to the input side of amplifier 12. Then, the gate of FETQN3 is connected to power terminal 2 to form a negative feedback loop to FETQP1 and amplifier 12 by way of FETQN3. The above-mentioned constitution provides reduction in output impedance. Additionally, the same effect can be obtained by reversing the channel types of FETQP1 and FETQN3 or by connecting sources and drains reversely.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP125879A JPS5595410A (en) | 1979-01-12 | 1979-01-12 | Mis field effect type transistor amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP125879A JPS5595410A (en) | 1979-01-12 | 1979-01-12 | Mis field effect type transistor amplifier circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595410A true JPS5595410A (en) | 1980-07-19 |
Family
ID=11496425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP125879A Pending JPS5595410A (en) | 1979-01-12 | 1979-01-12 | Mis field effect type transistor amplifier circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595410A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110641A (en) * | 1977-06-27 | 1978-08-29 | Honeywell Inc. | CMOS voltage comparator with internal hysteresis |
-
1979
- 1979-01-12 JP JP125879A patent/JPS5595410A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110641A (en) * | 1977-06-27 | 1978-08-29 | Honeywell Inc. | CMOS voltage comparator with internal hysteresis |
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