JPS5553911A - Mos transistor circuit - Google Patents

Mos transistor circuit

Info

Publication number
JPS5553911A
JPS5553911A JP12797378A JP12797378A JPS5553911A JP S5553911 A JPS5553911 A JP S5553911A JP 12797378 A JP12797378 A JP 12797378A JP 12797378 A JP12797378 A JP 12797378A JP S5553911 A JPS5553911 A JP S5553911A
Authority
JP
Japan
Prior art keywords
constitution
circuit
type
mosfet14
push
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12797378A
Other languages
Japanese (ja)
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12797378A priority Critical patent/JPS5553911A/en
Publication of JPS5553911A publication Critical patent/JPS5553911A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain an output circuit featuring the low power and high gain in a simple constitution by forming a kind of the push-pull circuit by giving the prescribed connection to the MOSFET. CONSTITUTION:P- and N-type MOSFETS11 and 13 feature the drain connected in common, and joint A is connected to the gates of MOSFET13 and N-type MOSFET 14. In this case the drains are connected to each other between P-type MOSFET12 and MOSFET14. When input IN1 and IN2 are applied to the circuit of such constitution, the signal of IN2 receives the level conversion at point A to be supplied to the gate of MOSFET14 in the form of the reversed output. Thus the signals of the same polarity are supplied to FET12 and 14, which means a kind of the push- pull circuit. In such way, an output circuit featuring the low power and high can be obtained in a simple constitution.
JP12797378A 1978-10-18 1978-10-18 Mos transistor circuit Pending JPS5553911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12797378A JPS5553911A (en) 1978-10-18 1978-10-18 Mos transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12797378A JPS5553911A (en) 1978-10-18 1978-10-18 Mos transistor circuit

Publications (1)

Publication Number Publication Date
JPS5553911A true JPS5553911A (en) 1980-04-19

Family

ID=14973266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12797378A Pending JPS5553911A (en) 1978-10-18 1978-10-18 Mos transistor circuit

Country Status (1)

Country Link
JP (1) JPS5553911A (en)

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