JPS5595321A - Container of semiconductor substrate for liquid-phase epitaxial growth - Google Patents

Container of semiconductor substrate for liquid-phase epitaxial growth

Info

Publication number
JPS5595321A
JPS5595321A JP312979A JP312979A JPS5595321A JP S5595321 A JPS5595321 A JP S5595321A JP 312979 A JP312979 A JP 312979A JP 312979 A JP312979 A JP 312979A JP S5595321 A JPS5595321 A JP S5595321A
Authority
JP
Japan
Prior art keywords
substrate
groove
liquid
main part
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP312979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217371B2 (en, 2012
Inventor
Susumu Furuike
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP312979A priority Critical patent/JPS5595321A/ja
Priority to US06/109,110 priority patent/US4354453A/en
Publication of JPS5595321A publication Critical patent/JPS5595321A/ja
Publication of JPS6217371B2 publication Critical patent/JPS6217371B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP312979A 1979-01-12 1979-01-12 Container of semiconductor substrate for liquid-phase epitaxial growth Granted JPS5595321A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP312979A JPS5595321A (en) 1979-01-12 1979-01-12 Container of semiconductor substrate for liquid-phase epitaxial growth
US06/109,110 US4354453A (en) 1979-01-12 1980-01-02 Substrate holder for liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP312979A JPS5595321A (en) 1979-01-12 1979-01-12 Container of semiconductor substrate for liquid-phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5595321A true JPS5595321A (en) 1980-07-19
JPS6217371B2 JPS6217371B2 (en, 2012) 1987-04-17

Family

ID=11548741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP312979A Granted JPS5595321A (en) 1979-01-12 1979-01-12 Container of semiconductor substrate for liquid-phase epitaxial growth

Country Status (2)

Country Link
US (1) US4354453A (en, 2012)
JP (1) JPS5595321A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567849A (en) * 1981-12-01 1986-02-04 Texas Instruments Incorporated Dipping liquid phase epitaxy for HgCdTe
JPS6439870U (en, 2012) * 1987-09-04 1989-03-09
JPH0266264U (en, 2012) * 1988-11-04 1990-05-18
TW344100B (en) * 1996-05-31 1998-11-01 Toshiba Co Ltd Semiconductor liquid phase epitaxial growth method and apparatus
DE10140761B4 (de) * 2001-08-20 2004-08-26 Infineon Technologies Ag Wafer-Handhabungsvorrichtung
JP2003292395A (ja) * 2002-03-29 2003-10-15 Canon Inc 液相成長装置および液相成長方法
US9343273B2 (en) * 2008-09-25 2016-05-17 Seagate Technology Llc Substrate holders for uniform reactive sputtering
US9995875B2 (en) 2015-07-28 2018-06-12 The Penn State Research Foundation Method and apparatus for producing crystalline cladding and crystalline core optical fibers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1941941A (en) * 1931-04-22 1934-01-02 William W Irwin Ware support for kilns
US2462218A (en) * 1945-04-17 1949-02-22 Bell Telephone Labor Inc Electrical translator and method of making it
NL7206014A (en, 2012) * 1971-07-07 1973-01-09
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
US3859148A (en) * 1972-12-01 1975-01-07 Bell Telephone Labor Inc Epitaxial crystal growth of group iii-v compound semiconductors from solution
US3918756A (en) * 1973-12-26 1975-11-11 Fluoroware Inc Wafer holder
US3974797A (en) * 1974-07-08 1976-08-17 Hutson Jearld L Apparatus for applying a film of material to substrates or slices
US4176751A (en) * 1977-01-27 1979-12-04 Northern Telecom Limited Container apparatus for handling semiconductor wafers

Also Published As

Publication number Publication date
US4354453A (en) 1982-10-19
JPS6217371B2 (en, 2012) 1987-04-17

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