JPS5593239A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5593239A JPS5593239A JP50579A JP50579A JPS5593239A JP S5593239 A JPS5593239 A JP S5593239A JP 50579 A JP50579 A JP 50579A JP 50579 A JP50579 A JP 50579A JP S5593239 A JPS5593239 A JP S5593239A
- Authority
- JP
- Japan
- Prior art keywords
- particle
- radiated
- electron
- malfunction
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 abstract 5
- 230000007257 malfunction Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 abstract 1
- 229910052776 Thorium Inorganic materials 0.000 abstract 1
- 229910052770 Uranium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910000833 kovar Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000002285 radioactive effect Effects 0.000 abstract 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Junction Field-Effect Transistors (AREA)
- Die Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50579A JPS5593239A (en) | 1979-01-04 | 1979-01-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50579A JPS5593239A (en) | 1979-01-04 | 1979-01-04 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5593239A true JPS5593239A (en) | 1980-07-15 |
| JPS6157704B2 JPS6157704B2 (enrdf_load_stackoverflow) | 1986-12-08 |
Family
ID=11475615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50579A Granted JPS5593239A (en) | 1979-01-04 | 1979-01-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5593239A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5598846A (en) * | 1979-01-22 | 1980-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5630745A (en) * | 1979-08-22 | 1981-03-27 | Fujitsu Ltd | Semiconductor device |
| JPS5970347U (ja) * | 1982-11-02 | 1984-05-12 | ティーディーケイ株式会社 | 集積回路装置 |
| JPS61107119A (ja) * | 1984-10-30 | 1986-05-26 | Hamamatsu Photonics Kk | セラミツク容器を用いたシリコンホトセル |
| JPS62281358A (ja) * | 1986-05-29 | 1987-12-07 | Nec Kyushu Ltd | 半導体装置 |
| US4866498A (en) * | 1988-04-20 | 1989-09-12 | The United States Department Of Energy | Integrated circuit with dissipative layer for photogenerated carriers |
| US4975762A (en) * | 1981-06-11 | 1990-12-04 | General Electric Ceramics, Inc. | Alpha-particle-emitting ceramic composite cover |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6416718U (enrdf_load_stackoverflow) * | 1987-07-20 | 1989-01-27 |
-
1979
- 1979-01-04 JP JP50579A patent/JPS5593239A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5598846A (en) * | 1979-01-22 | 1980-07-28 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5630745A (en) * | 1979-08-22 | 1981-03-27 | Fujitsu Ltd | Semiconductor device |
| US4975762A (en) * | 1981-06-11 | 1990-12-04 | General Electric Ceramics, Inc. | Alpha-particle-emitting ceramic composite cover |
| JPS5970347U (ja) * | 1982-11-02 | 1984-05-12 | ティーディーケイ株式会社 | 集積回路装置 |
| JPS61107119A (ja) * | 1984-10-30 | 1986-05-26 | Hamamatsu Photonics Kk | セラミツク容器を用いたシリコンホトセル |
| JPS62281358A (ja) * | 1986-05-29 | 1987-12-07 | Nec Kyushu Ltd | 半導体装置 |
| US4866498A (en) * | 1988-04-20 | 1989-09-12 | The United States Department Of Energy | Integrated circuit with dissipative layer for photogenerated carriers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6157704B2 (enrdf_load_stackoverflow) | 1986-12-08 |
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