JPS5591153A - Semiconductor resistor structure - Google Patents

Semiconductor resistor structure

Info

Publication number
JPS5591153A
JPS5591153A JP15823379A JP15823379A JPS5591153A JP S5591153 A JPS5591153 A JP S5591153A JP 15823379 A JP15823379 A JP 15823379A JP 15823379 A JP15823379 A JP 15823379A JP S5591153 A JPS5591153 A JP S5591153A
Authority
JP
Japan
Prior art keywords
resistor structure
semiconductor resistor
semiconductor
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15823379A
Other languages
English (en)
Inventor
Pooru Nue Jiyan
Rubesunure Jieraaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5591153A publication Critical patent/JPS5591153A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP15823379A 1978-12-28 1979-12-07 Semiconductor resistor structure Pending JPS5591153A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7837092A FR2445617A1 (fr) 1978-12-28 1978-12-28 Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication

Publications (1)

Publication Number Publication Date
JPS5591153A true JPS5591153A (en) 1980-07-10

Family

ID=9216833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15823379A Pending JPS5591153A (en) 1978-12-28 1979-12-07 Semiconductor resistor structure

Country Status (4)

Country Link
US (1) US4298401A (ja)
EP (1) EP0013340A1 (ja)
JP (1) JPS5591153A (ja)
FR (1) FR2445617A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218153A (ja) * 1989-02-17 1990-08-30 Matsushita Electron Corp 抵抗とｍｉｓ型トランジスタ
JP2004063955A (ja) * 2002-07-31 2004-02-26 Sanyo Electric Co Ltd 半導体装置
JP2004342897A (ja) * 2003-05-16 2004-12-02 Renesas Technology Corp 半導体装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS57201062A (en) * 1981-06-05 1982-12-09 Nec Corp Semiconductor device
DE3219888A1 (de) * 1982-05-27 1983-12-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Planares halbleiterbauelement und verfahren zur herstellung
US4464212A (en) * 1982-12-13 1984-08-07 International Business Machines Corporation Method for making high sheet resistivity resistors
US4633289A (en) * 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4601760A (en) * 1984-05-09 1986-07-22 Analog Devices, Incorporated Ion-implanted process for forming IC wafer with buried-reference diode and IC structure made with such process
DE3581348D1 (de) * 1984-09-28 1991-02-21 Siemens Ag Verfahren zum herstellen eines pn-uebergangs mit hoher durchbruchsspannung.
GB2188478B (en) * 1986-03-26 1989-11-22 Stc Plc Forming doped wells in sillicon subtstrates
KR890002811B1 (ko) * 1986-11-04 1989-07-31 삼성전자 주식회사 히트 싱크를 겸한 과전류 파괴방지용 집적회로를 내장한 발광소자 패키지
US4801555A (en) * 1987-01-14 1989-01-31 Motorola, Inc. Double-implant process for forming graded source/drain regions
US5240511A (en) * 1987-02-20 1993-08-31 National Semiconductor Corporation Lightly doped polycrystalline silicon resistor having a non-negative temperature coefficient
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
US5107309A (en) * 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5889312A (en) * 1993-07-02 1999-03-30 Hitachi, Ltd. Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same
DE19543922A1 (de) * 1995-11-24 1997-05-28 Siemens Ag Verfahren zum Herabsetzen der Trägerspeicherladung in Halbleiterbauelementen
US6242314B1 (en) 1998-09-28 2001-06-05 Taiwan Semiconductor Manufacturing Company Method for fabricating a on-chip temperature controller by co-implant polysilicon resistor
US6238993B1 (en) * 1999-04-27 2001-05-29 Taiwan Semiconductor Manufacturing Company Polysilicon load for 4T SRAM operation at cold temperatures
JP4599660B2 (ja) * 2000-05-24 2010-12-15 ソニー株式会社 半導体抵抗素子を有する半導体装置とその製造方法
US6791161B2 (en) * 2002-04-08 2004-09-14 Fabtech, Inc. Precision Zener diodes
US8940598B2 (en) * 2010-11-03 2015-01-27 Texas Instruments Incorporated Low temperature coefficient resistor in CMOS flow
RU2648295C1 (ru) * 2017-01-10 2018-03-23 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Способ изготовления электрически изолированных резисторов микросхем

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB421061I5 (ja) * 1964-12-24
US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
US3548269A (en) * 1968-12-03 1970-12-15 Sprague Electric Co Resistive layer semiconductive device
US4005450A (en) * 1970-05-13 1977-01-25 Hitachi, Ltd. Insulated gate field effect transistor having drain region containing low impurity concentration layer
US3920493A (en) * 1971-08-26 1975-11-18 Dionics Inc Method of producing a high voltage PN junction
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US4051504A (en) * 1975-10-14 1977-09-27 General Motors Corporation Ion implanted zener diode
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
US4125415A (en) * 1975-12-22 1978-11-14 Motorola, Inc. Method of making high voltage semiconductor structure
US4136349A (en) * 1977-05-27 1979-01-23 Analog Devices, Inc. Ic chip with buried zener diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218153A (ja) * 1989-02-17 1990-08-30 Matsushita Electron Corp 抵抗とｍｉｓ型トランジスタ
JP2004063955A (ja) * 2002-07-31 2004-02-26 Sanyo Electric Co Ltd 半導体装置
JP2004342897A (ja) * 2003-05-16 2004-12-02 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
FR2445617A1 (fr) 1980-07-25
US4298401A (en) 1981-11-03
EP0013340A1 (fr) 1980-07-23

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