JPS558047A - Formation of electrode of semiconductor - Google Patents

Abstract

PURPOSE:To deposit metallic layer on the insulating film provided on a semiconductor substrate, make transfer electrodes by dividing said metallic layer, breed insulating film to fill up the clearances between said electrodes, and provide openings at a given range to expose said electrodes to that said electrodes have small distances from each other. CONSTITUTION:SiO2 film 2 and Al coat E are laminatedly deposited on an Si substrate 1, transfer electrodes E3 and E6 are devidedly formed by patterning film E, and thick SiO2 film 4 is bred over the whole surface of said substrate 1 to fill up the clearances therebetween. Next, the portions between (a) and (b), between (c) and (d), and between (e) and (f) which portions form weight coefficient electrodes, of said film 4, are removed, and etching resistant layeres 5a - 5g are provided on said films E3 and E6 exposed, as well as the portions 4a and 4b and 4e - f4 surrounding said films E3 and E6, of said film 4. Thereafter, the Al film on the portions where electrodes provided with weight coefficient will are desired to be formed are exposed for outside connection by providing openings over the buses of said electrodes W1 - W3 and B1 connecting therewith. Thus, small distances can be provided between electrodes, and the suspended capacities between electrodes and buses can be decreased.