JPS5578553A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5578553A
JPS5578553A JP15099478A JP15099478A JPS5578553A JP S5578553 A JPS5578553 A JP S5578553A JP 15099478 A JP15099478 A JP 15099478A JP 15099478 A JP15099478 A JP 15099478A JP S5578553 A JPS5578553 A JP S5578553A
Authority
JP
Japan
Prior art keywords
coat
solution
nmp
polyimide
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15099478A
Other languages
Japanese (ja)
Inventor
Yoshi Hiramoto
Masuichi Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP15099478A priority Critical patent/JPS5578553A/en
Publication of JPS5578553A publication Critical patent/JPS5578553A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To form polyimide resin coat on the organic titanium compound coat previously formed on the surfaces of a semiconductor and inorganic insulating coat to increase the adhersion of Si or the insulating coat and the polyimide resin coat to each other.
CONSTITUTION: This invention is described in connection with one embodiment thereof herein. The amount of 40.04gr. of diaminodiphenylether is dissolved in 400gr. of N-methylpyrrolidone (NMP), and thus-obtained solution is adjusted to 20°C. The amount of 42.75gr. of dianhydrous pyromellitate (PMDA) and 74gr. of NMP are added to the solution, and the sloution is stirred at 30°C for one hour for obtaining 16.5 poises of polyamidic acid (polyimide precursor) solution (30°C). After forming a transistor, tetra-n-butyl titanate coat is formed on a silicon wafer having silicon oxide protective film over the whole surface thereof by cellophane tape stripping method, and next polyimide coat using polyamidic acid solution.
COPYRIGHT: (C)1980,JPO&Japio
JP15099478A 1978-12-08 1978-12-08 Manufacture of semiconductor Pending JPS5578553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15099478A JPS5578553A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15099478A JPS5578553A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5578553A true JPS5578553A (en) 1980-06-13

Family

ID=15508951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15099478A Pending JPS5578553A (en) 1978-12-08 1978-12-08 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5578553A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134766A (en) * 1974-04-15 1975-10-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134766A (en) * 1974-04-15 1975-10-25

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