JPS5577162A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5577162A JPS5577162A JP15008778A JP15008778A JPS5577162A JP S5577162 A JPS5577162 A JP S5577162A JP 15008778 A JP15008778 A JP 15008778A JP 15008778 A JP15008778 A JP 15008778A JP S5577162 A JPS5577162 A JP S5577162A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- carbon fiber
- buried
- pellet
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Abstract
PURPOSE: To reconcile a parallel direction thermal expantion coefficient with that of an Si pellet by making an electrode with the material wherein carbon fiber is buried in copper alloy containing metal easier to be oxidized than copper.
CONSTITUTION: Carbon fiber is buried in a copper alloy containing about 1W 15wt% of metal easier to be oxidized than copper such as Zr, Ti, Cr, Zn, Sb, Al, Si, Be. Said metal can be solid solved or deposited in copper. In this way, thin film oxide is produced on the surface of copper and carbon fiber to improve wetting produced on an interface with coated glass by a chemical combination through O2. When also carbon fiber is, for example, buried in parallel with a centrifugal pellet surface, a parallel direction thermal expansion coefficient can be reconciled with a pellet. Consequently, when a glass coated Si semiconductor device is formed using said electronic material, effective heat radiation can be provided without producing glass crack.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15008778A JPS5577162A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15008778A JPS5577162A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5577162A true JPS5577162A (en) | 1980-06-10 |
Family
ID=15489221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15008778A Pending JPS5577162A (en) | 1978-12-06 | 1978-12-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577162A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128274A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Semiconductor device |
-
1978
- 1978-12-06 JP JP15008778A patent/JPS5577162A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128274A (en) * | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890013201A (en) | Corrosion-resistant aluminum product and preparation method thereof | |
JPS566772A (en) | Instrument for casting | |
JPS5738190A (en) | Recording member | |
JPS5577162A (en) | Semiconductor device | |
JPS5429555A (en) | Heat sink constituent | |
JPS5613754A (en) | Preparation of semiconductor stem | |
JPS57189356A (en) | Information recording medium | |
Whittles et al. | Improvements in high temperature oxidation resistance by additions of reactive elements or oxide dispersions | |
JPS55158678A (en) | Manufacture of solar cell | |
JPS57164546A (en) | Semiconductor device | |
JPS57183053A (en) | Semiconductor device | |
JPS56129645A (en) | Forming method for metallic thin film | |
JPS5519873A (en) | Forming method of metallic layer pattern for semiconductor | |
JPS57205395A (en) | Manufacture of crystal substrate | |
JPS57130429A (en) | Formation of electrode wiring | |
JPS54142584A (en) | Preparation of compound superconductive wire or coil | |
JPS5796520A (en) | Method for forming silicon single crystal film | |
JPS5416305A (en) | Preparation of metal material of particle dispersion type | |
JPS54133406A (en) | High speed induction melting furnace | |
JPS56160345A (en) | Cover glass for wrist watch | |
JPS5625951A (en) | High permeability alloy sheet | |
JPS5352997A (en) | Thin film type heating resistor body | |
JPS55149892A (en) | Gas flow counter | |
JPS57174650A (en) | Solar heat absorbing body | |
JPS54142965A (en) | Direct-heated cathode |