JPS5573451A - Preparation of silicon crystal - Google Patents

Preparation of silicon crystal

Info

Publication number
JPS5573451A
JPS5573451A JP15192079A JP15192079A JPS5573451A JP S5573451 A JPS5573451 A JP S5573451A JP 15192079 A JP15192079 A JP 15192079A JP 15192079 A JP15192079 A JP 15192079A JP S5573451 A JPS5573451 A JP S5573451A
Authority
JP
Japan
Prior art keywords
preparation
silicon crystal
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15192079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6251920B2 (cg-RX-API-DMAC7.html
Inventor
Guraapumaiyaa Yoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5573451A publication Critical patent/JPS5573451A/ja
Publication of JPS6251920B2 publication Critical patent/JPS6251920B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
JP15192079A 1978-11-23 1979-11-22 Preparation of silicon crystal Granted JPS5573451A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2850790A DE2850790C2 (de) 1978-11-23 1978-11-23 Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen

Publications (2)

Publication Number Publication Date
JPS5573451A true JPS5573451A (en) 1980-06-03
JPS6251920B2 JPS6251920B2 (cg-RX-API-DMAC7.html) 1987-11-02

Family

ID=6055414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15192079A Granted JPS5573451A (en) 1978-11-23 1979-11-22 Preparation of silicon crystal

Country Status (3)

Country Link
US (1) US4319953A (cg-RX-API-DMAC7.html)
JP (1) JPS5573451A (cg-RX-API-DMAC7.html)
DE (1) DE2850790C2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105568374A (zh) * 2016-03-16 2016-05-11 常熟华融太阳能新型材料有限公司 一种多晶铸锭用选择性全熔高效坩埚

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017923A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
DE3017842A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktor gleichwertigen saeulenstruktur durch sintern
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen "verfahren zur herstellung von halbleiterscheiben"
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3305933A1 (de) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum herstellen von polykristallinen, grossflaechigen siliziumkristallkoerpern fuer solarzellen
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4594128A (en) * 1984-03-16 1986-06-10 Cook Melvin S Liquid phase epitaxy
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
US4772564A (en) * 1985-10-30 1988-09-20 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell fabrication process
US4677250A (en) * 1985-10-30 1987-06-30 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell
US4781766A (en) * 1985-10-30 1988-11-01 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell and method
JPS62291977A (ja) * 1986-06-06 1987-12-18 シ−メンス、アクチエンゲゼルシヤフト 太陽電池用シリコン盤の切り出し方法と装置
US5825068A (en) * 1997-03-17 1998-10-20 Integrated Device Technology, Inc. Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor
US20100086465A1 (en) * 2007-01-25 2010-04-08 Gen Kojima Apparatus and method for manufacturing silicon substrate, and silicon substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2508803C3 (de) 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
FR2401696A1 (fr) 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4171991A (en) * 1978-04-12 1979-10-23 Semix, Incorporated Method of forming silicon impregnated foraminous sheet by immersion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105568374A (zh) * 2016-03-16 2016-05-11 常熟华融太阳能新型材料有限公司 一种多晶铸锭用选择性全熔高效坩埚

Also Published As

Publication number Publication date
US4319953A (en) 1982-03-16
DE2850790C2 (de) 1987-02-19
JPS6251920B2 (cg-RX-API-DMAC7.html) 1987-11-02
DE2850790A1 (de) 1980-06-12

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