JPS556898A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS556898A
JPS556898A JP8491779A JP8491779A JPS556898A JP S556898 A JPS556898 A JP S556898A JP 8491779 A JP8491779 A JP 8491779A JP 8491779 A JP8491779 A JP 8491779A JP S556898 A JPS556898 A JP S556898A
Authority
JP
Japan
Prior art keywords
range
ranges
conductive type
longitudinal direction
lateral direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8491779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS562421B2 (enExample
Inventor
Masanori Nakai
Shintaro Ito
Seiya Tokumaru
Junichi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8491779A priority Critical patent/JPS556898A/ja
Publication of JPS556898A publication Critical patent/JPS556898A/ja
Publication of JPS562421B2 publication Critical patent/JPS562421B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
JP8491779A 1979-07-06 1979-07-06 Semiconductor device Granted JPS556898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8491779A JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8491779A JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12425074A Division JPS5513428B2 (enExample) 1974-10-30 1974-10-30

Publications (2)

Publication Number Publication Date
JPS556898A true JPS556898A (en) 1980-01-18
JPS562421B2 JPS562421B2 (enExample) 1981-01-20

Family

ID=13844061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8491779A Granted JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS556898A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57127920U (enExample) * 1981-02-05 1982-08-10

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (enExample) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (enExample) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS562421B2 (enExample) 1981-01-20

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