JPS556886A - Semiconductor resistor - Google Patents

Semiconductor resistor

Info

Publication number
JPS556886A
JPS556886A JP6509079A JP6509079A JPS556886A JP S556886 A JPS556886 A JP S556886A JP 6509079 A JP6509079 A JP 6509079A JP 6509079 A JP6509079 A JP 6509079A JP S556886 A JPS556886 A JP S556886A
Authority
JP
Japan
Prior art keywords
semiconductor resistor
resistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6509079A
Other languages
English (en)
Inventor
Baratooru Danieru
Douraporuto Furansowa
Rubesunure Jieraaru
Niyue Shiyannpooru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS556886A publication Critical patent/JPS556886A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP6509079A 1978-06-29 1979-05-28 Semiconductor resistor Pending JPS556886A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7820115A FR2430092A1 (fr) 1978-06-29 1978-06-29 Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues

Publications (1)

Publication Number Publication Date
JPS556886A true JPS556886A (en) 1980-01-18

Family

ID=9210379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6509079A Pending JPS556886A (en) 1978-06-29 1979-05-28 Semiconductor resistor

Country Status (4)

Country Link
US (1) US4263518A (ja)
EP (1) EP0006474A1 (ja)
JP (1) JPS556886A (ja)
FR (1) FR2430092A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131240U (ja) * 1975-04-15 1976-10-22
JPS61185959A (ja) * 1985-02-13 1986-08-19 Pioneer Electronic Corp 半導体抵抗装置
JP2015149720A (ja) * 2014-02-04 2015-08-20 トライクイント・セミコンダクター・インコーポレイテッドＴｒｉＱｕｉｎｔ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． 電界効果トランジスタスイッチ回路

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140260A (en) * 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5811750B2 (ja) * 1979-06-04 1983-03-04 株式会社日立製作所 高耐圧抵抗素子
US4455567A (en) * 1981-11-27 1984-06-19 Hughes Aircraft Company Polycrystalline semiconductor resistor having a noise reducing field plate
US4502206A (en) * 1983-11-18 1985-03-05 Rca Corporation Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
JPS63244765A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 拡散抵抗を有する集積回路
US5428242A (en) * 1988-11-22 1995-06-27 Seiko Epson Corporation Semiconductor devices with shielding for resistance elements
US5936454A (en) * 1993-06-01 1999-08-10 Motorola, Inc. Lateral bipolar transistor operating with independent base and gate biasing
CA2179246C (en) * 1995-09-20 2000-10-24 Kris Iniewski Polysilicon defined diffused resistor
US5767757A (en) * 1996-07-29 1998-06-16 Harris Corporation Electrically variable R/C network and method
US6081106A (en) * 1998-08-21 2000-06-27 Cisco Technology, Inc. Voltage setpoint error reduction
US6291306B1 (en) 1999-07-19 2001-09-18 Taiwan Semiconductor Manufacturing Company Method of improving the voltage coefficient of resistance of high polysilicon resistors
JP3722655B2 (ja) 1999-11-12 2005-11-30 シャープ株式会社 Ｓｏｉ半導体装置
US6362067B1 (en) * 2001-02-15 2002-03-26 Semiconductor Components Industries Llc Accurate self-aligned resistor structure and method of making the same
US7183593B2 (en) * 2003-12-05 2007-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Heterostructure resistor and method of forming the same
US8492801B2 (en) * 2007-05-11 2013-07-23 System General Corp. Semiconductor structure with high breakdown voltage and resistance
US10535651B2 (en) 2016-10-12 2020-01-14 Mediatek Inc. Impedance circuit with poly-resistor
US10510823B2 (en) 2016-10-12 2019-12-17 Mediatek Inc. Impedance circuit with poly-resistor
US10461702B2 (en) 2017-04-19 2019-10-29 Mediatek Inc. Amplifier circuit having poly resistor with biased depletion region
US10416242B2 (en) * 2017-09-08 2019-09-17 Invensense, Inc. High voltage circuitry with drift mitigation
CN110400791B (zh) 2018-04-25 2021-12-10 华为技术有限公司 一种多晶硅电阻

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087593A (ja) * 1973-12-06 1975-07-14
JPS51140581A (en) * 1975-05-30 1976-12-03 Nec Corp Semiconductor resistance element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1563533A (ja) * 1967-05-20 1969-04-11
US3700977A (en) * 1971-02-17 1972-10-24 Motorola Inc Diffused resistor
US4161742A (en) * 1975-08-02 1979-07-17 Ferranti Limited Semiconductor devices with matched resistor portions
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
US4072868A (en) * 1976-09-16 1978-02-07 International Business Machines Corporation FET inverter with isolated substrate load
US4164668A (en) * 1977-05-12 1979-08-14 International Business Machines Corporation Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate
SE7900379L (sv) * 1978-01-25 1979-07-26 Western Electric Co Halvledare-integrerad-krets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087593A (ja) * 1973-12-06 1975-07-14
JPS51140581A (en) * 1975-05-30 1976-12-03 Nec Corp Semiconductor resistance element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51131240U (ja) * 1975-04-15 1976-10-22
JPS5713547Y2 (ja) * 1975-04-15 1982-03-18
JPS61185959A (ja) * 1985-02-13 1986-08-19 Pioneer Electronic Corp 半導体抵抗装置
JP2015149720A (ja) * 2014-02-04 2015-08-20 トライクイント・セミコンダクター・インコーポレイテッドＴｒｉＱｕｉｎｔ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ，Ｉｎｃ． 電界効果トランジスタスイッチ回路

Also Published As

Publication number Publication date
FR2430092B1 (ja) 1980-11-28
EP0006474A1 (fr) 1980-01-09
US4263518A (en) 1981-04-21
FR2430092A1 (fr) 1980-01-25

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