JPS5567169A - Charge detector for charge transfer device - Google Patents

Charge detector for charge transfer device

Info

Publication number
JPS5567169A
JPS5567169A JP14074478A JP14074478A JPS5567169A JP S5567169 A JPS5567169 A JP S5567169A JP 14074478 A JP14074478 A JP 14074478A JP 14074478 A JP14074478 A JP 14074478A JP S5567169 A JPS5567169 A JP S5567169A
Authority
JP
Japan
Prior art keywords
gate
charge
voltage
fetq2
transfer device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14074478A
Other languages
English (en)
Other versions
JPS5829633B2 (ja
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53140744A priority Critical patent/JPS5829633B2/ja
Publication of JPS5567169A publication Critical patent/JPS5567169A/ja
Publication of JPS5829633B2 publication Critical patent/JPS5829633B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP53140744A 1978-11-14 1978-11-14 電荷転送装置の電荷検出装置 Expired JPS5829633B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53140744A JPS5829633B2 (ja) 1978-11-14 1978-11-14 電荷転送装置の電荷検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53140744A JPS5829633B2 (ja) 1978-11-14 1978-11-14 電荷転送装置の電荷検出装置

Publications (2)

Publication Number Publication Date
JPS5567169A true JPS5567169A (en) 1980-05-21
JPS5829633B2 JPS5829633B2 (ja) 1983-06-23

Family

ID=15275703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53140744A Expired JPS5829633B2 (ja) 1978-11-14 1978-11-14 電荷転送装置の電荷検出装置

Country Status (1)

Country Link
JP (1) JPS5829633B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5287393A (en) * 1991-01-18 1994-02-15 Nec Corporation Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification
CN103811510A (zh) * 2014-03-07 2014-05-21 上海华虹宏力半导体制造有限公司 图像传感器的像素单元及其形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5287393A (en) * 1991-01-18 1994-02-15 Nec Corporation Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification
CN103811510A (zh) * 2014-03-07 2014-05-21 上海华虹宏力半导体制造有限公司 图像传感器的像素单元及其形成方法
CN103811510B (zh) * 2014-03-07 2016-04-06 上海华虹宏力半导体制造有限公司 图像传感器的像素单元及其形成方法

Also Published As

Publication number Publication date
JPS5829633B2 (ja) 1983-06-23

Similar Documents

Publication Publication Date Title
JPS5772429A (en) Semiconductor integrated circuit device
JPS55156370A (en) Manufacture of semiconductor device
JPS5333076A (en) Production of mos type integrated circuit
JPS57130292A (en) Semiconductor nonvolatile read-only storage device
JPS5493981A (en) Semiconductor device
JPS54132753A (en) Referential voltage generator and its application
JPS54116887A (en) Mos type semiconductor device
JPS5567169A (en) Charge detector for charge transfer device
JPS5548957A (en) Semiconductor logic element
JPS5651090A (en) Nonvolatile semiconductor memory
JPS57160148A (en) Microwave integrated circuit device
JPS5448179A (en) Mis-type semiconductor integrated circuit device
JPS5610958A (en) Semiconductor circuit
JPS5289478A (en) Mos integrated circuit
JPS556856A (en) Semiconductor integrated circuit
JPS56117388A (en) Address buffer circuit
JPS52149481A (en) Semiconductor integrated circuit device and its production
JPS5717227A (en) Integrated circuit device
JPS5794984A (en) Semiconductor storage device
JPS553602A (en) Negative resistance device
JPS547149A (en) Constant current circuit
JPS53125784A (en) Semiconductor device
JPS55146975A (en) Mos field effect type semiconductor device
JPS55166953A (en) Semiconductor integrated circuit device
JPS555538A (en) Decoder circuit