Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and TechnologyfiledCriticalCHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13841778ApriorityCriticalpatent/JPS5565144A/ja
Publication of JPS5565144ApublicationCriticalpatent/JPS5565144A/ja
Publication of JPS6212855B2publicationCriticalpatent/JPS6212855B2/ja
The effects of electron and hole trapping on the radiation hardness of Al 2 O 3 MIS(Metal Insulator Semiconductor) devices(Effects of electron and hole trapping on radiation hardness of aluminum oxide MIS devices)