JPS5563869A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5563869A JPS5563869A JP13803978A JP13803978A JPS5563869A JP S5563869 A JPS5563869 A JP S5563869A JP 13803978 A JP13803978 A JP 13803978A JP 13803978 A JP13803978 A JP 13803978A JP S5563869 A JPS5563869 A JP S5563869A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- iron
- lifetime
- temperature
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 6
- 229910052737 gold Inorganic materials 0.000 abstract 6
- 239000010931 gold Substances 0.000 abstract 6
- 229910052742 iron Inorganic materials 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- -1 Iron ions Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To raise the controllability and reproducibility of the lifetime of carriers and facilitate the control of temperature dependence, by providing iron, gold and/or platinum in a semiconductor layer to control the lifetime of carriers. CONSTITUTION:Iron ions are implanted at the rate of 1X10<13>cm<-3> into a GTO thyristor from its reverse side. The thyristor is then annealed at a temperature of 1000 deg.C under an atmosphere of nitrogen for 1 hour. A gold film is evaporated at a thickness of 600Angstrom on the reverse side and diffused at a temperature of 890 deg.C. The recovery time Trr of GCS with gold and iron diffused is almost constant independently of the diffusion time of the gold. The lifetime tau is affected by the gold in the main at low temperature but by the iron in the main at high temperature. Diffusing both iron and gold in a semiconductor device is preferable to flatten its forward voltage VF. Since plural kinds of killers are used, the control of the lifetime is facilitated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13803978A JPS5563869A (en) | 1978-11-09 | 1978-11-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13803978A JPS5563869A (en) | 1978-11-09 | 1978-11-09 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5563869A true JPS5563869A (en) | 1980-05-14 |
| JPS6220691B2 JPS6220691B2 (en) | 1987-05-08 |
Family
ID=15212589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13803978A Granted JPS5563869A (en) | 1978-11-09 | 1978-11-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5563869A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106012A (en) * | 2019-12-20 | 2020-05-05 | 电子科技大学 | Method for realizing local service life control of semiconductor device |
-
1978
- 1978-11-09 JP JP13803978A patent/JPS5563869A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106012A (en) * | 2019-12-20 | 2020-05-05 | 电子科技大学 | Method for realizing local service life control of semiconductor device |
| CN111106012B (en) * | 2019-12-20 | 2022-05-17 | 电子科技大学 | Method for realizing local service life control of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6220691B2 (en) | 1987-05-08 |
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