JPS5558551A - Wiring - Google Patents

Wiring

Info

Publication number
JPS5558551A
JPS5558551A JP13199778A JP13199778A JPS5558551A JP S5558551 A JPS5558551 A JP S5558551A JP 13199778 A JP13199778 A JP 13199778A JP 13199778 A JP13199778 A JP 13199778A JP S5558551 A JPS5558551 A JP S5558551A
Authority
JP
Japan
Prior art keywords
layer
wiring
layers
mask
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13199778A
Other languages
Japanese (ja)
Inventor
Goro Miyake
Kazuya Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13199778A priority Critical patent/JPS5558551A/en
Publication of JPS5558551A publication Critical patent/JPS5558551A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To strengthen a mask layer and obtain fine wiring, by fitting on a semiconductor base plate a metal layer which becomes wiring, providing on top of this a metal layer which has a large resisting force against the bombardment of an ion beam, covering it with a resist layer, and removing unneeded metal layers by means of a beam.
CONSTITUTION: Ti layer 3, Pt layer 4, and Au layer 5, which are to become wiring layers, are laminated on Si base plate 1, on which required semiconductor elements are fitted. On top of this is provided Ti layer 8, which is to become a milling mask and has a larger resisting force against an ion beam than Au. Next, on top of this is provided resist layer 6 corresponding to the wiring pattern. By irradiating Ar+ and an electron ion beam, exposed layers 3, 5, 4 are scraped off, and only Ti layer 3 is retained, and thereby the effect of beam 7 on elements is precluded by layer 3. Subsequently, layer 8, which has functioned as a mask, and the lowerst layer 3 are removed by chemical ethching, and only internal wiring 9 consisting of layers 5, 4 and 3 is retained.
COPYRIGHT: (C)1980,JPO&Japio
JP13199778A 1978-10-26 1978-10-26 Wiring Pending JPS5558551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13199778A JPS5558551A (en) 1978-10-26 1978-10-26 Wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13199778A JPS5558551A (en) 1978-10-26 1978-10-26 Wiring

Publications (1)

Publication Number Publication Date
JPS5558551A true JPS5558551A (en) 1980-05-01

Family

ID=15071131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13199778A Pending JPS5558551A (en) 1978-10-26 1978-10-26 Wiring

Country Status (1)

Country Link
JP (1) JPS5558551A (en)

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