JPS5558548A - Forming of wiring metal pattern of semiconductor device - Google Patents
Forming of wiring metal pattern of semiconductor deviceInfo
- Publication number
- JPS5558548A JPS5558548A JP13120178A JP13120178A JPS5558548A JP S5558548 A JPS5558548 A JP S5558548A JP 13120178 A JP13120178 A JP 13120178A JP 13120178 A JP13120178 A JP 13120178A JP S5558548 A JPS5558548 A JP S5558548A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- fitted
- pattern
- wiring
- wiring metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To cut the connection between an electrode to be retained and a wiring layer to be removed and make it easy to form a pattern, by providing a gap between an upper layer and a lower layer by using a laminated mask when a metal wiring layer is formed on a semiconductor base plate via an insulating layer having a window.
CONSTITUTION: Insulating layer 7 is fitted to semiconductor base plate 1 on which semiconductor elements are formed. Window 8 is provided on the diffusion region, and platinum silicide layer 9 is fitted here. Next, the entire surface is fitted with photosensitive resin layer 10 Al film and 11, which cannot be corroded by plasma etching. By photoetching, only film 11 is made into pattern 11'. Subsequently, by using this as mask, layer 10 is plasma-etched. Layer 10 is pushed under pattern 11', and a canopy is formed for pattern 11'. Next, the entire surface is fitted with wiring metal layer 13 made of Ti, Pt, Au, and gap 14 is produced below the canopy, and thereby layer 13a fitted into layer 9 and layer 13b fitted on the surface are made to be cut easily. Subsequently, only layer 13a is retained and layer 13b is removed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13120178A JPS5558548A (en) | 1978-10-25 | 1978-10-25 | Forming of wiring metal pattern of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13120178A JPS5558548A (en) | 1978-10-25 | 1978-10-25 | Forming of wiring metal pattern of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5558548A true JPS5558548A (en) | 1980-05-01 |
Family
ID=15052393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13120178A Pending JPS5558548A (en) | 1978-10-25 | 1978-10-25 | Forming of wiring metal pattern of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5558548A (en) |
-
1978
- 1978-10-25 JP JP13120178A patent/JPS5558548A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5740975A (en) | Manufacture for semiconductor device | |
JPS5558548A (en) | Forming of wiring metal pattern of semiconductor device | |
JPS5750429A (en) | Manufacture of semiconductor device | |
JPS54117680A (en) | Semiconductor device | |
JPS5272571A (en) | Production of semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS5515263A (en) | Mos type semiconductor device | |
JPS5527659A (en) | Method of manufacturing semiconductor device | |
JPS559415A (en) | Semiconductor manufacturing method | |
JPS546775A (en) | Semiconductor device featuring stepped electrode structure | |
JPS56130920A (en) | Forming method of electrode for semiconductor device | |
JPS5558550A (en) | Manufacture of semiconductor device | |
JPS53101978A (en) | Electrode forming method | |
JPS5513981A (en) | Semiconductor device | |
JPS5558547A (en) | Wiring | |
JPS54107686A (en) | Manufacture for semiconductor device | |
JPS5446492A (en) | Mesa-type semiconductor device | |
JPS5271994A (en) | Semiconductor integrated circuit device | |
JPS5211862A (en) | Semiconductor device | |
JPS53114365A (en) | Manufacture of semiconductor device | |
JPS5543858A (en) | Semiconductor device | |
JPS5353989A (en) | Production of semiconductor device | |
JPS5319774A (en) | Semiconductor integrated circuit | |
JPS5271993A (en) | Production of semiconductor integrated circuit device | |
JPS5539675A (en) | Method of forming electrode wiring of semiconductor |