JPS5556671A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS5556671A JPS5556671A JP12960978A JP12960978A JPS5556671A JP S5556671 A JPS5556671 A JP S5556671A JP 12960978 A JP12960978 A JP 12960978A JP 12960978 A JP12960978 A JP 12960978A JP S5556671 A JPS5556671 A JP S5556671A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- hole
- xcdxte
- evaporated
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12960978A JPS5556671A (en) | 1978-10-20 | 1978-10-20 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12960978A JPS5556671A (en) | 1978-10-20 | 1978-10-20 | Photoelectric converter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5556671A true JPS5556671A (en) | 1980-04-25 |
JPS6220710B2 JPS6220710B2 (enrdf_load_stackoverflow) | 1987-05-08 |
Family
ID=15013683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12960978A Granted JPS5556671A (en) | 1978-10-20 | 1978-10-20 | Photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5556671A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0439511U (enrdf_load_stackoverflow) * | 1990-07-19 | 1992-04-03 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110715A (enrdf_load_stackoverflow) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
-
1978
- 1978-10-20 JP JP12960978A patent/JPS5556671A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5110715A (enrdf_load_stackoverflow) * | 1974-07-05 | 1976-01-28 | Hitachi Ltd | |
JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
Also Published As
Publication number | Publication date |
---|---|
JPS6220710B2 (enrdf_load_stackoverflow) | 1987-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hezel et al. | Low‐temperature surface passivation of silicon for solar cells | |
DE2654429C2 (de) | Verfahren zum Herstellen eines Photoelements mit einem lichtempfindlichen halbleitenden Substrat aus der Legierung Cd↓x↓Hg↓1↓↓-↓↓x↓Te | |
JPS5556671A (en) | Photoelectric converter | |
Van Meirhaeghe et al. | Effects of thin oxide layers on the characteristics of GaAs MIS solar cells | |
JPS5470776A (en) | Semiconductor device and its manufacture | |
JPS5795625A (en) | Manufacture of semiconductor device | |
GB1561953A (en) | Photodiodes | |
JPS6423580A (en) | Semiconductor photodetector device | |
US4057822A (en) | Channel type photo-electric energy transducer | |
JPS5649523A (en) | Manufacture of semiconductor device | |
JPS5553461A (en) | Manufacture of semiconductor device | |
JPS5812750B2 (ja) | 光電変換半導体装置 | |
JPS5685858A (en) | Semiconductor device | |
SU150951A1 (ru) | Селеновый фотоэлемент с запирающим слоем повышенной инфракрасной чувствительности и способ его изготовлени | |
RU845678C (ru) | Способ изготовлени ВЧ р- @ -р транзисторов | |
JPS5783055A (en) | Thin film transistor | |
JPS5474624A (en) | Solidstate pick up unit | |
JPS5526669A (en) | Manufacturing semiconductor device | |
JPS55107257A (en) | Ohmic electrode | |
JPS55133542A (en) | Manufacturing method of mesa-type semiconductor device | |
JPS57159072A (en) | Manufacture of avalanche photodiode | |
JPS56104476A (en) | Manufacture of semiconductor device | |
JPS6428968A (en) | Solar cell | |
JPS5556773A (en) | Solid state pickup device | |
JPS55146984A (en) | Photoelectric converting device and its manufacturing |