JPS5556625A - Semiconductor crystal growing device - Google Patents

Semiconductor crystal growing device

Info

Publication number
JPS5556625A
JPS5556625A JP12961578A JP12961578A JPS5556625A JP S5556625 A JPS5556625 A JP S5556625A JP 12961578 A JP12961578 A JP 12961578A JP 12961578 A JP12961578 A JP 12961578A JP S5556625 A JPS5556625 A JP S5556625A
Authority
JP
Japan
Prior art keywords
substrate
bottom plate
holder
hole
solution tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12961578A
Other languages
English (en)
Inventor
Haruyoshi Yamanaka
Masaru Kazumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12961578A priority Critical patent/JPS5556625A/ja
Priority to US06/084,297 priority patent/US4338877A/en
Priority to GB7936217A priority patent/GB2035686B/en
Priority to DE19792942203 priority patent/DE2942203A1/de
Priority to FR7926089A priority patent/FR2439477A1/fr
Priority to CA000338042A priority patent/CA1160762A/en
Publication of JPS5556625A publication Critical patent/JPS5556625A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12961578A 1978-10-20 1978-10-20 Semiconductor crystal growing device Pending JPS5556625A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12961578A JPS5556625A (en) 1978-10-20 1978-10-20 Semiconductor crystal growing device
US06/084,297 US4338877A (en) 1978-10-20 1979-10-12 Apparatus for making semiconductor devices
GB7936217A GB2035686B (en) 1978-10-20 1979-10-18 Method of making semiconductor devices by epitaxial deposition and apparatus for making the same
DE19792942203 DE2942203A1 (de) 1978-10-20 1979-10-18 Verfahren und vorrichtung zur herstellung von halbleitervorrichtungen
FR7926089A FR2439477A1 (fr) 1978-10-20 1979-10-19 Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide
CA000338042A CA1160762A (en) 1978-10-20 1979-10-19 Liquid phase epitaxy method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12961578A JPS5556625A (en) 1978-10-20 1978-10-20 Semiconductor crystal growing device

Publications (1)

Publication Number Publication Date
JPS5556625A true JPS5556625A (en) 1980-04-25

Family

ID=15013836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12961578A Pending JPS5556625A (en) 1978-10-20 1978-10-20 Semiconductor crystal growing device

Country Status (6)

Country Link
US (1) US4338877A (ja)
JP (1) JPS5556625A (ja)
CA (1) CA1160762A (ja)
DE (1) DE2942203A1 (ja)
FR (1) FR2439477A1 (ja)
GB (1) GB2035686B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1318012C (zh) * 2002-04-05 2007-05-30 株式会社日本吸收体技术研究所 具有旁路通道部件的吸收体和使用了该吸收体的吸收体制品

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036643C2 (de) * 1980-09-29 1984-09-20 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Flüssigphasen-Epitaxie
JPS5968926A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp 液相エピタキシヤル成長方法
SE443583B (sv) * 1982-11-12 1986-03-03 Ericsson Telefon Ab L M Anordning vid vetskefasepitaxi
US4632055A (en) * 1985-03-22 1986-12-30 Ryder International Corp. Apparatus for tinting soft contact lenses
US4620851A (en) * 1985-03-22 1986-11-04 Ryder International Corporation Method for tinting soft contact lenses

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE122153C (ja) *
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
SU460826A1 (ru) * 1972-10-16 1977-01-05 Ордена Ленина физико-технический институт им.А.Ф.Иоффе Устройство дл изготовлени многослойных полупроводниковых структур методом жидкостной эпитаксии
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
JPS5248949B2 (ja) * 1974-12-20 1977-12-13
DD122153A1 (ja) 1975-10-08 1976-09-12
US4123302A (en) * 1978-02-21 1978-10-31 Rca Corporation Method for depositing epitaxial semiconductor from the liquid phase

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1318012C (zh) * 2002-04-05 2007-05-30 株式会社日本吸收体技术研究所 具有旁路通道部件的吸收体和使用了该吸收体的吸收体制品
US7521109B2 (en) 2002-04-05 2009-04-21 Japan Absorbent Technology Institute Absorber including by-pass channel member and absorber product therefrom

Also Published As

Publication number Publication date
FR2439477A1 (fr) 1980-05-16
FR2439477B1 (ja) 1984-01-27
DE2942203A1 (de) 1980-04-30
CA1160762A (en) 1984-01-17
GB2035686B (en) 1983-01-19
DE2942203C2 (ja) 1988-08-04
GB2035686A (en) 1980-06-18
US4338877A (en) 1982-07-13

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