FR2439477A1 - Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide - Google Patents
Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquideInfo
- Publication number
- FR2439477A1 FR2439477A1 FR7926089A FR7926089A FR2439477A1 FR 2439477 A1 FR2439477 A1 FR 2439477A1 FR 7926089 A FR7926089 A FR 7926089A FR 7926089 A FR7926089 A FR 7926089A FR 2439477 A1 FR2439477 A1 FR 2439477A1
- Authority
- FR
- France
- Prior art keywords
- liquid phase
- epitaxial growth
- manufacturing semiconductors
- walls
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
LE DISPOSITIF DE FABRICATION DE SEMI-CONDUCTEURS COMPRENANT UN BLOC COMPORTANT UN TROU EN FORME DE FENTE QUI MAINTIENT UN SUBSTRAT SEMI-CONDUCTEUR ET UN CONTENEUR DE FACON A CONTENIR LES SOLUTIONS DE SEMI-CONDUCTEURS ET PEUT COULISSER SUR LE BLOC, EST CARACTERISE EN CE QUE LE TROU EN FORME DE FENTE COMPORTE DES PAROIS QUI FORMENT UN ANGLE IMPORTANT PAR RAPPORT AU PLAN HORIZONTAL ET COMPORTE UN ORIFICE D'ADMISSION DE SOLUTION A SA PARTIE SUPERIEURE ET UN ORIFICE DE SORTIE DE SOLUTION A SA PARTIE INFERIEURE, ET UN MOYEN POUR MAINTENIR LE SUBSTRAT AVEC SA FACE PRINCIPALE SENSIBLEMENT PARALLELE AUX PAROIS.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12961578A JPS5556625A (en) | 1978-10-20 | 1978-10-20 | Semiconductor crystal growing device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2439477A1 true FR2439477A1 (fr) | 1980-05-16 |
FR2439477B1 FR2439477B1 (fr) | 1984-01-27 |
Family
ID=15013836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7926089A Granted FR2439477A1 (fr) | 1978-10-20 | 1979-10-19 | Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide |
Country Status (6)
Country | Link |
---|---|
US (1) | US4338877A (fr) |
JP (1) | JPS5556625A (fr) |
CA (1) | CA1160762A (fr) |
DE (1) | DE2942203A1 (fr) |
FR (1) | FR2439477A1 (fr) |
GB (1) | GB2035686B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0048872A1 (fr) * | 1980-09-29 | 1982-04-07 | Siemens Aktiengesellschaft | Dispositif pour la croissance épitaxiale en phase liquide |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5968926A (ja) * | 1982-10-12 | 1984-04-19 | Mitsubishi Electric Corp | 液相エピタキシヤル成長方法 |
SE443583B (sv) * | 1982-11-12 | 1986-03-03 | Ericsson Telefon Ab L M | Anordning vid vetskefasepitaxi |
US4632055A (en) * | 1985-03-22 | 1986-12-30 | Ryder International Corp. | Apparatus for tinting soft contact lenses |
US4620851A (en) * | 1985-03-22 | 1986-11-04 | Ryder International Corporation | Method for tinting soft contact lenses |
JP4261120B2 (ja) * | 2002-04-05 | 2009-04-30 | 株式会社日本吸収体技術研究所 | バイパスチャネル部材を具備する吸収体およびそれを用いた吸収体製品 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE122153C (fr) * | ||||
US3759759A (en) * | 1970-01-29 | 1973-09-18 | Fairchild Camera Instr Co | Push pull method for solution epitaxial growth of iii v compounds |
BE788374A (fr) * | 1971-12-08 | 1973-01-02 | Rca Corp | Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat |
SU460826A1 (ru) * | 1972-10-16 | 1977-01-05 | Ордена Ленина физико-технический институт им.А.Ф.Иоффе | Устройство дл изготовлени многослойных полупроводниковых структур методом жидкостной эпитаксии |
US3879235A (en) * | 1973-06-11 | 1975-04-22 | Massachusetts Inst Technology | Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface |
JPS5248949B2 (fr) * | 1974-12-20 | 1977-12-13 | ||
DD122153A1 (fr) | 1975-10-08 | 1976-09-12 | ||
US4123302A (en) * | 1978-02-21 | 1978-10-31 | Rca Corporation | Method for depositing epitaxial semiconductor from the liquid phase |
-
1978
- 1978-10-20 JP JP12961578A patent/JPS5556625A/ja active Pending
-
1979
- 1979-10-12 US US06/084,297 patent/US4338877A/en not_active Expired - Lifetime
- 1979-10-18 GB GB7936217A patent/GB2035686B/en not_active Expired
- 1979-10-18 DE DE19792942203 patent/DE2942203A1/de active Granted
- 1979-10-19 FR FR7926089A patent/FR2439477A1/fr active Granted
- 1979-10-19 CA CA000338042A patent/CA1160762A/fr not_active Expired
Non-Patent Citations (2)
Title |
---|
EXBK/72 * |
EXBK/77 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0048872A1 (fr) * | 1980-09-29 | 1982-04-07 | Siemens Aktiengesellschaft | Dispositif pour la croissance épitaxiale en phase liquide |
Also Published As
Publication number | Publication date |
---|---|
DE2942203C2 (fr) | 1988-08-04 |
US4338877A (en) | 1982-07-13 |
JPS5556625A (en) | 1980-04-25 |
DE2942203A1 (de) | 1980-04-30 |
FR2439477B1 (fr) | 1984-01-27 |
CA1160762A (fr) | 1984-01-17 |
GB2035686B (en) | 1983-01-19 |
GB2035686A (en) | 1980-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |