JPS5553438A - Treatment of semiconductor substrate - Google Patents

Treatment of semiconductor substrate

Info

Publication number
JPS5553438A
JPS5553438A JP12707678A JP12707678A JPS5553438A JP S5553438 A JPS5553438 A JP S5553438A JP 12707678 A JP12707678 A JP 12707678A JP 12707678 A JP12707678 A JP 12707678A JP S5553438 A JPS5553438 A JP S5553438A
Authority
JP
Japan
Prior art keywords
filter
substrate
semiconductor substrate
stage
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12707678A
Other languages
Japanese (ja)
Inventor
Akinori Tanizaki
Noboru Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12707678A priority Critical patent/JPS5553438A/en
Publication of JPS5553438A publication Critical patent/JPS5553438A/en
Pending legal-status Critical Current

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Landscapes

  • Dicing (AREA)

Abstract

PURPOSE: To enable to perform complete dicing down to the bottom surface of a substrate without causing damage to the dicing blade by using a teflon filter as the support for a semiconductor substrate to be diced.
CONSTITUTION: Bonding wax 22 is coated on the back surface of semiconductor substrate 21 provided with bump 21' on its front surface, and teflon filter 23 is fitted on this surface. Next, filter 23 is fixed on vacuum chucking stage 24 of the dicing device with the surface of filter 23 directed downward, and thereby cutting groove 25, which cuts substrate 21 completely, is formed. Subsequently, filter 23, together with substrate 21 lying on this, is removed form stage 24, and a new teflon filter 26 is mounted on the surface of substrate 21. Then, this is sandwiched by cleaning jig 28, 28', having vacuum-drawing hole 27, and fixed by clips 30, 30'. Next, by using trichloroethylene, wax 22 is removed, filter 26 is removed on stage 31, and the chip is transferred onto adhesive sheet 33.
COPYRIGHT: (C)1980,JPO&Japio
JP12707678A 1978-10-16 1978-10-16 Treatment of semiconductor substrate Pending JPS5553438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12707678A JPS5553438A (en) 1978-10-16 1978-10-16 Treatment of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12707678A JPS5553438A (en) 1978-10-16 1978-10-16 Treatment of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5553438A true JPS5553438A (en) 1980-04-18

Family

ID=14950975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12707678A Pending JPS5553438A (en) 1978-10-16 1978-10-16 Treatment of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5553438A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494549A (en) * 1992-01-08 1996-02-27 Rohm Co., Ltd. Dicing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494549A (en) * 1992-01-08 1996-02-27 Rohm Co., Ltd. Dicing method

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