JPS5550658A - Method of fabricating semiconductor device - Google Patents

Abstract

PURPOSE: To enhance the forward dielectric voltage of a semiconductor device by providing a pattern of metallic film thereafter becoming part of a metallic electrode when forming a region including impurities different in conductivity type from a semiconductor layer in the layer and implanting ion with the pattern as a mask.

CONSTITUTION: A p-type impurity ion is implanted to both front and back surfaces of an n-type semiconductor substrate 1, the substrate 1 is then heat treated, a p⁺-type layer is formed thereon to thus from a p⁺np⁺-type junction structure. Then, aluminum or the like is selectively coated on the surface of the p⁺-type layer becoming a cathode layer, and n-type impurity ion is implanted thereto with the aluminum as a mask to thereby provide a shallow n⁺-type region to thus form a p⁺np⁺n junction structure of four layers. Then, aluminum is coated on the entire surface of the latter structure to thereby form a cathode electrode making contact with the n⁺-type region. Thus, no abnormal n-type impurity diffusion occurs to thereby improve the forward dielectric voltage for a thyristor or the like and it can eliminate a heat oxide film normally used so as to thereby simplify the fabricating steps.

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