JPS51131482A
(en)
*
|
1975-05-12 |
1976-11-15 |
Anelva Corp |
A sputtering apparatus
|
JPS5362937A
(en)
*
|
1976-11-17 |
1978-06-05 |
Toshiba Corp |
Momory control device
|
JPS53138648U
(ja)
*
|
1977-04-07 |
1978-11-02 |
|
|
US4100055A
(en)
*
|
1977-06-10 |
1978-07-11 |
Varian Associates, Inc. |
Target profile for sputtering apparatus
|
US5187115A
(en)
*
|
1977-12-05 |
1993-02-16 |
Plasma Physics Corp. |
Method of forming semiconducting materials and barriers using a dual enclosure apparatus
|
FR2483848A1
(fr)
*
|
1980-06-06 |
1981-12-11 |
Stephanois Rech Mec |
Procede pour la fabrication d'une couche composite resistant a la fois au grippage, a l'abrasion, a la corrosion et a la fatigue par contraintes alternees, et couche composite ainsi obtenue
|
DE3027256A1
(de)
*
|
1980-07-18 |
1982-02-18 |
Robert Bosch Gmbh, 7000 Stuttgart |
Mehrschichtsystem fuer waermeschutzanwendungen und verfahren zu seiner herstellung
|
EP0079860A1
(fr)
*
|
1981-11-16 |
1983-05-25 |
Battelle Memorial Institute |
Empreinte pour matrice de moulage ou de pressage de précision de matière plastique notamment de disques d'enregistrement d'information et procédé de revêtement de cette empreinte
|
DD216839A3
(de)
*
|
1981-12-17 |
1984-12-19 |
Flachglaskomb Torgau Veb |
Hochkorrosionsbestaendiges reflexionsschichtsystem auf substraten
|
JPS5976875A
(ja)
*
|
1982-10-22 |
1984-05-02 |
Hitachi Ltd |
マグネトロン型スパッタ装置とそれに用いるターゲット
|
GR79744B
(ja)
*
|
1982-12-10 |
1984-10-31 |
Boc Group Plc |
|
GB2139647B
(en)
*
|
1983-02-24 |
1986-11-19 |
Boc Group Plc |
Bottle coated ion-plating or magnetron sputtering
|
US4420385A
(en)
*
|
1983-04-15 |
1983-12-13 |
Gryphon Products |
Apparatus and process for sputter deposition of reacted thin films
|
US4512864A
(en)
*
|
1983-11-30 |
1985-04-23 |
Ppg Industries, Inc. |
Low resistance indium oxide films
|
US4486287A
(en)
*
|
1984-02-06 |
1984-12-04 |
Fournier Paul R |
Cross-field diode sputtering target assembly
|
DE3413587A1
(de)
*
|
1984-04-11 |
1985-10-17 |
Flachglas AG, 8510 Fürth |
Verfahren zum herstellen der zinndioxid-interferenzschicht (en) insbesondere von waermereflektierend beschichteten glasscheiben durch reaktive magnetron-zerstaeubung, zinntarget zu seiner durchfuehrung sowie mit einer danach hergestellten zinndioxidschicht versehene waermereflektierende glasscheibe
|
US4849082A
(en)
*
|
1986-02-03 |
1989-07-18 |
The Babcock & Wilcox Company |
Ion implantation of zirconium alloys with hafnium
|
JPS62182269A
(ja)
*
|
1986-02-03 |
1987-08-10 |
ザ・バブコツク・アンド・ウイルコツクス・カンパニ− |
クロムによるジルコニウム合金のイオン打込み
|
US4693805A
(en)
*
|
1986-02-14 |
1987-09-15 |
Boe Limited |
Method and apparatus for sputtering a dielectric target or for reactive sputtering
|
US5047131A
(en)
*
|
1989-11-08 |
1991-09-10 |
The Boc Group, Inc. |
Method for coating substrates with silicon based compounds
|
DE4237517A1
(de)
*
|
1992-11-06 |
1994-05-11 |
Leybold Ag |
Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
|
US6217717B1
(en)
|
1992-12-30 |
2001-04-17 |
Advanced Energy Industries, Inc. |
Periodically clearing thin film plasma processing system
|
US5718813A
(en)
*
|
1992-12-30 |
1998-02-17 |
Advanced Energy Industries, Inc. |
Enhanced reactive DC sputtering system
|
CA2123479C
(en)
*
|
1993-07-01 |
1999-07-06 |
Peter A. Sieck |
Anode structure for magnetron sputtering systems
|
GB9405613D0
(en)
*
|
1994-03-22 |
1994-05-11 |
British Tech Group |
Laser waveguide
|
US5464667A
(en)
*
|
1994-08-16 |
1995-11-07 |
Minnesota Mining And Manufacturing Company |
Jet plasma process and apparatus
|
DE19501804A1
(de)
|
1995-01-21 |
1996-07-25 |
Leybold Ag |
Vorrichtung zur Beschichtung von Substraten
|
WO1996034124A1
(en)
*
|
1995-04-25 |
1996-10-31 |
The Boc Group, Inc. |
Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
|
US5830272A
(en)
*
|
1995-11-07 |
1998-11-03 |
Sputtered Films, Inc. |
System for and method of providing a controlled deposition on wafers
|
US5830336A
(en)
*
|
1995-12-05 |
1998-11-03 |
Minnesota Mining And Manufacturing Company |
Sputtering of lithium
|
DE19627533A1
(de)
*
|
1996-07-09 |
1998-01-15 |
Leybold Materials Gmbh |
Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
|
US6203898B1
(en)
|
1997-08-29 |
2001-03-20 |
3M Innovatave Properties Company |
Article comprising a substrate having a silicone coating
|
US6074730A
(en)
*
|
1997-12-31 |
2000-06-13 |
The Boc Group, Inc. |
Broad-band antireflection coating having four sputtered layers
|
US6589657B2
(en)
|
2001-08-31 |
2003-07-08 |
Von Ardenne Anlagentechnik Gmbh |
Anti-reflection coatings and associated methods
|
US9771648B2
(en)
*
|
2004-08-13 |
2017-09-26 |
Zond, Inc. |
Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
|
US20050103620A1
(en)
*
|
2003-11-19 |
2005-05-19 |
Zond, Inc. |
Plasma source with segmented magnetron cathode
|
WO2006036846A1
(en)
*
|
2004-09-24 |
2006-04-06 |
Zond, Inc. |
Apparatus for generating high-current electrical discharges
|
US7372610B2
(en)
|
2005-02-23 |
2008-05-13 |
Sage Electrochromics, Inc. |
Electrochromic devices and methods
|
CN101300658B
(zh)
*
|
2005-11-04 |
2010-06-09 |
冯·阿德纳设备有限公司 |
用于冗余阳极溅射的方法和系统
|
US9782949B2
(en)
|
2008-05-30 |
2017-10-10 |
Corning Incorporated |
Glass laminated articles and layered articles
|
JP5359587B2
(ja)
*
|
2008-07-24 |
2013-12-04 |
Tdk株式会社 |
静電気対策素子
|
US20100160700A1
(en)
*
|
2008-12-18 |
2010-06-24 |
Chevron U.S.A. Inc. |
Process and catalysts for reforming fisher tropsch naphthas to aromatics
|
US8182662B2
(en)
*
|
2009-03-27 |
2012-05-22 |
Sputtering Components, Inc. |
Rotary cathode for magnetron sputtering apparatus
|
DE102022002669A1
(de)
|
2022-07-21 |
2024-02-01 |
Singulus Technologies Aktiengesellschaft |
Beschichtungsanlage und Verfahren zum Target-Austausch
|