JPS5539625A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5539625A
JPS5539625A JP11237078A JP11237078A JPS5539625A JP S5539625 A JPS5539625 A JP S5539625A JP 11237078 A JP11237078 A JP 11237078A JP 11237078 A JP11237078 A JP 11237078A JP S5539625 A JPS5539625 A JP S5539625A
Authority
JP
Japan
Prior art keywords
film
layer
ripping
constitution
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11237078A
Other languages
Japanese (ja)
Inventor
Kiichi Usuki
Kazuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11237078A priority Critical patent/JPS5539625A/en
Publication of JPS5539625A publication Critical patent/JPS5539625A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To protect Au on a metal electrode layer from ripping, thus preventing from producing rejects, by interposing barrier metal layer between metal electrode layer and diffusion area.
CONSTITUTION: An opening is made in SiO2 4 of an N-type Si base board 1, and a P layer 2 is formed. A Ti or V film 10 that seals well to the film 4 is coverd with a thickness of approximately 500Å or more. Then a gold electrode 15 is installed. With this constitution, the gold film is prevented from ripping even if it is heated to about 900°C when sealing it to the surroundings.
COPYRIGHT: (C)1980,JPO&Japio
JP11237078A 1978-09-14 1978-09-14 Zener diode Pending JPS5539625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11237078A JPS5539625A (en) 1978-09-14 1978-09-14 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11237078A JPS5539625A (en) 1978-09-14 1978-09-14 Zener diode

Publications (1)

Publication Number Publication Date
JPS5539625A true JPS5539625A (en) 1980-03-19

Family

ID=14584982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11237078A Pending JPS5539625A (en) 1978-09-14 1978-09-14 Zener diode

Country Status (1)

Country Link
JP (1) JPS5539625A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546373A (en) * 1983-02-07 1985-10-08 The General Electric Company, P.L.C. Semiconductor device with a tantalum iridium barrier layer contact structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546373A (en) * 1983-02-07 1985-10-08 The General Electric Company, P.L.C. Semiconductor device with a tantalum iridium barrier layer contact structure

Similar Documents

Publication Publication Date Title
EP0395072A3 (en) Bonding pad used in semiconductor device
TW345753B (en) Electrode pad in p-conductive-type III-group nitride semiconductor, element with electrode pad, and its manufacturing method
JPS5539625A (en) Zener diode
JPS52117551A (en) Semiconductor device
JPS52143785A (en) Semiconductor device
JPS5294773A (en) Semiconductor element and its manufacture
JPS57210646A (en) Resin-sealed semiconductor device
JPS54117680A (en) Semiconductor device
JPS57187963A (en) Manufacture of semiconductor device
JPS5348671A (en) Electrode structure of semiconductor element
JPS5458380A (en) Zener diode
JPS6482652A (en) Manufacture of semiconductor device
JPS57208178A (en) Semiconductor device
JPS5662376A (en) Schottky diode
JPS52150966A (en) Semiconductor device
JPS57181172A (en) Schottky barrier diode and manufacture thereof
JPS52151567A (en) Protecting method of wiring layers
JPS5380184A (en) Manufacture of semiconductor device
JPS52155986A (en) Semiconductor device
JPS5478662A (en) Semiconductor device and its manufacture
JPS54577A (en) Resin seal semiconductor device
JPS5796542A (en) Semiconductor device
JPS57153477A (en) Manufacture of semiconductor device
JPS54129888A (en) Semiconductor unit
JPS56105644A (en) Semiconductor ic device