JPS553668A - Semiconductor luminous device and its preparation - Google Patents

Semiconductor luminous device and its preparation

Info

Publication number
JPS553668A
JPS553668A JP7619478A JP7619478A JPS553668A JP S553668 A JPS553668 A JP S553668A JP 7619478 A JP7619478 A JP 7619478A JP 7619478 A JP7619478 A JP 7619478A JP S553668 A JPS553668 A JP S553668A
Authority
JP
Japan
Prior art keywords
lens
laser
fiber
end surface
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7619478A
Other languages
Japanese (ja)
Other versions
JPS5923479B2 (en
Inventor
Kenji Ikeda
Hideyo Higuchi
Kenji Horikiri
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP53076194A priority Critical patent/JPS5923479B2/en
Publication of JPS553668A publication Critical patent/JPS553668A/en
Publication of JPS5923479B2 publication Critical patent/JPS5923479B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To narrow an angle of emergence by lens effect, by directly glueing a minute convex lens to a semiconductor laser luminous end surface.
CONSTITUTION: A laser chip 101 is soldered to a substrate 103, and a lead wire 106 is mounted. Polyacrylate 105 is applied to a luminous end surface of a laser 107 formed. The laser is radiated, a photo-fiber 111, to which nose a spherical lens 110 is glued, is brought near, a location where the quantity of lights in the fiber is maximum is detected, the lens 110 is contacted with the adhesives 105 and the location where the quantity of lights in the fiber is maximum is again detected. When ultraviolet rays are irradiated while the fiber remains as it is located at the optimum position, the adhesives 105 are hardened and the lens is calmly parted from a luminous surface, a concave portion 108 in acrylate with the curvature of the lens is formed to the laser end surface. A spherical high refractive index glass lens 109 separately prepared is inserted into the concave portion 108, and ultraviolet rays are again irradiated, thus completing work.
COPYRIGHT: (C)1980,JPO&Japio
JP53076194A 1978-06-22 1978-06-22 Method for manufacturing semiconductor light emitting device Expired JPS5923479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53076194A JPS5923479B2 (en) 1978-06-22 1978-06-22 Method for manufacturing semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53076194A JPS5923479B2 (en) 1978-06-22 1978-06-22 Method for manufacturing semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS553668A true JPS553668A (en) 1980-01-11
JPS5923479B2 JPS5923479B2 (en) 1984-06-02

Family

ID=13598324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53076194A Expired JPS5923479B2 (en) 1978-06-22 1978-06-22 Method for manufacturing semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5923479B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146389A (en) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp Surface-emission semiconductor laser
EP0773298A1 (en) 1995-11-09 1997-05-14 Nalco Chemical Company Monitoring the level of microbiological activity of a fluid system
US5702684A (en) * 1994-05-02 1997-12-30 Nalco Chemical Company Method of use of compositions of biocides and fluorescent indicators to control microbial growth
JP2011003889A (en) * 2009-05-21 2011-01-06 Nichia Corp Semiconductor laser device and method for manufacturing the same
JP2011119699A (en) * 2009-11-05 2011-06-16 Nichia Corp Semiconductor laser device and method of manufacturing the same
JP2012212734A (en) * 2011-03-30 2012-11-01 Nichia Chem Ind Ltd Semiconductor laser device
JP2019507376A (en) * 2016-02-04 2019-03-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Optoelectronic lighting device manufacturing method and optoelectronic lighting device
JP2020537337A (en) * 2017-10-12 2020-12-17 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH Manufacturing methods for semiconductor lasers and optoelectronic semiconductor components

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63134885U (en) * 1987-02-13 1988-09-05
JPS63194088U (en) * 1987-06-02 1988-12-14

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146389A (en) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp Surface-emission semiconductor laser
US5702684A (en) * 1994-05-02 1997-12-30 Nalco Chemical Company Method of use of compositions of biocides and fluorescent indicators to control microbial growth
EP0773298A1 (en) 1995-11-09 1997-05-14 Nalco Chemical Company Monitoring the level of microbiological activity of a fluid system
JP2011003889A (en) * 2009-05-21 2011-01-06 Nichia Corp Semiconductor laser device and method for manufacturing the same
JP2011119699A (en) * 2009-11-05 2011-06-16 Nichia Corp Semiconductor laser device and method of manufacturing the same
JP2012212734A (en) * 2011-03-30 2012-11-01 Nichia Chem Ind Ltd Semiconductor laser device
JP2019507376A (en) * 2016-02-04 2019-03-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Optoelectronic lighting device manufacturing method and optoelectronic lighting device
US10931081B2 (en) 2016-02-04 2021-02-23 Osram Oled Gmbh Method of producing an optoelectronic lighting device and optoelectronic lighting device
JP2020537337A (en) * 2017-10-12 2020-12-17 オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングOSRAM OLED GmbH Manufacturing methods for semiconductor lasers and optoelectronic semiconductor components
US11735887B2 (en) 2017-10-12 2023-08-22 Osram Oled Gmbh Semiconductor laser and method of production for optoelectronic semiconductor parts
US11870214B2 (en) 2017-10-12 2024-01-09 Osram Oled Gmbh Semiconductor laser and method of production for optoelectronic semiconductor parts

Also Published As

Publication number Publication date
JPS5923479B2 (en) 1984-06-02

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