JPS5533095A - Semiconductor light emitting device applied with semiconductor light waveguide - Google Patents
Semiconductor light emitting device applied with semiconductor light waveguideInfo
- Publication number
- JPS5533095A JPS5533095A JP9811279A JP9811279A JPS5533095A JP S5533095 A JPS5533095 A JP S5533095A JP 9811279 A JP9811279 A JP 9811279A JP 9811279 A JP9811279 A JP 9811279A JP S5533095 A JPS5533095 A JP S5533095A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- layers
- type
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To propagate light of predetermined mode in effective light waveguide by providing a photoconductive semiconductor layer with a light transmitting mode control semiconductor layer on one light enclosing layer as interposed with smaller light enclosing layer having lower refractive index than that of the photoconductive semiconductor layer. CONSTITUTION:P-type and N-type Al0.3Ga0.7As light enclosing layers 2, 3, P-type GaAs light conductive layer 1, P-type Al0.4Ga0.6As light transmission control layer 6 are formed on N-type GaAs substrate 7. Layers 6A, 6B are disposed with the same material and thickness as the layer 6' in predetermined interval at the position presenting no layer 6' on the layer 2, and P-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6', and N-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6A, 6B. Oxide films 11', 11A, 11B are selectively formed on the side surfaces of the layers 6', 6A, 6B to thereby form ohmic electrodes 9, 10. According to this configuration, when predetermined voltage is applied to the electrodes 9, 10, light is emitted from the portion of the region 5, only the light of predetermined mode is transmitted through the region 5 as effective waveguide and introduced from the end outwardly.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9811279A JPS5533095A (en) | 1979-08-02 | 1979-08-02 | Semiconductor light emitting device applied with semiconductor light waveguide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9811279A JPS5533095A (en) | 1979-08-02 | 1979-08-02 | Semiconductor light emitting device applied with semiconductor light waveguide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533095A true JPS5533095A (en) | 1980-03-08 |
JPS5710591B2 JPS5710591B2 (en) | 1982-02-26 |
Family
ID=14211231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9811279A Granted JPS5533095A (en) | 1979-08-02 | 1979-08-02 | Semiconductor light emitting device applied with semiconductor light waveguide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533095A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159118A (en) * | 1982-03-18 | 1983-09-21 | Mitsubishi Electric Corp | Constant voltage device |
JPS61166193A (en) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | Optical integrated circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49134348A (en) * | 1972-10-10 | 1974-12-24 | ||
JPS5124187A (en) * | 1974-07-22 | 1976-02-26 | Hitachi Ltd | HANDOTAIREEZA SOCHITO SONOSEIZO HOHO |
-
1979
- 1979-08-02 JP JP9811279A patent/JPS5533095A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49134348A (en) * | 1972-10-10 | 1974-12-24 | ||
JPS5124187A (en) * | 1974-07-22 | 1976-02-26 | Hitachi Ltd | HANDOTAIREEZA SOCHITO SONOSEIZO HOHO |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58159118A (en) * | 1982-03-18 | 1983-09-21 | Mitsubishi Electric Corp | Constant voltage device |
JPS61166193A (en) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | Optical integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5710591B2 (en) | 1982-02-26 |
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