JPS5533095A - Semiconductor light emitting device applied with semiconductor light waveguide - Google Patents

Semiconductor light emitting device applied with semiconductor light waveguide

Info

Publication number
JPS5533095A
JPS5533095A JP9811279A JP9811279A JPS5533095A JP S5533095 A JPS5533095 A JP S5533095A JP 9811279 A JP9811279 A JP 9811279A JP 9811279 A JP9811279 A JP 9811279A JP S5533095 A JPS5533095 A JP S5533095A
Authority
JP
Japan
Prior art keywords
light
layer
layers
type
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9811279A
Other languages
Japanese (ja)
Other versions
JPS5710591B2 (en
Inventor
Hitoshi Kawaguchi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9811279A priority Critical patent/JPS5533095A/en
Publication of JPS5533095A publication Critical patent/JPS5533095A/en
Publication of JPS5710591B2 publication Critical patent/JPS5710591B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To propagate light of predetermined mode in effective light waveguide by providing a photoconductive semiconductor layer with a light transmitting mode control semiconductor layer on one light enclosing layer as interposed with smaller light enclosing layer having lower refractive index than that of the photoconductive semiconductor layer. CONSTITUTION:P-type and N-type Al0.3Ga0.7As light enclosing layers 2, 3, P-type GaAs light conductive layer 1, P-type Al0.4Ga0.6As light transmission control layer 6 are formed on N-type GaAs substrate 7. Layers 6A, 6B are disposed with the same material and thickness as the layer 6' in predetermined interval at the position presenting no layer 6' on the layer 2, and P-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6', and N-type electrode connecting GaAs layers 8, 8A, 8B are formed on the layers 6A, 6B. Oxide films 11', 11A, 11B are selectively formed on the side surfaces of the layers 6', 6A, 6B to thereby form ohmic electrodes 9, 10. According to this configuration, when predetermined voltage is applied to the electrodes 9, 10, light is emitted from the portion of the region 5, only the light of predetermined mode is transmitted through the region 5 as effective waveguide and introduced from the end outwardly.
JP9811279A 1979-08-02 1979-08-02 Semiconductor light emitting device applied with semiconductor light waveguide Granted JPS5533095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9811279A JPS5533095A (en) 1979-08-02 1979-08-02 Semiconductor light emitting device applied with semiconductor light waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9811279A JPS5533095A (en) 1979-08-02 1979-08-02 Semiconductor light emitting device applied with semiconductor light waveguide

Publications (2)

Publication Number Publication Date
JPS5533095A true JPS5533095A (en) 1980-03-08
JPS5710591B2 JPS5710591B2 (en) 1982-02-26

Family

ID=14211231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9811279A Granted JPS5533095A (en) 1979-08-02 1979-08-02 Semiconductor light emitting device applied with semiconductor light waveguide

Country Status (1)

Country Link
JP (1) JPS5533095A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159118A (en) * 1982-03-18 1983-09-21 Mitsubishi Electric Corp Constant voltage device
JPS61166193A (en) * 1985-01-18 1986-07-26 Matsushita Electric Ind Co Ltd Optical integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49134348A (en) * 1972-10-10 1974-12-24
JPS5124187A (en) * 1974-07-22 1976-02-26 Hitachi Ltd HANDOTAIREEZA SOCHITO SONOSEIZO HOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49134348A (en) * 1972-10-10 1974-12-24
JPS5124187A (en) * 1974-07-22 1976-02-26 Hitachi Ltd HANDOTAIREEZA SOCHITO SONOSEIZO HOHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159118A (en) * 1982-03-18 1983-09-21 Mitsubishi Electric Corp Constant voltage device
JPS61166193A (en) * 1985-01-18 1986-07-26 Matsushita Electric Ind Co Ltd Optical integrated circuit

Also Published As

Publication number Publication date
JPS5710591B2 (en) 1982-02-26

Similar Documents

Publication Publication Date Title
US4396833A (en) Optomicrowave integrated circuit
GB2321783A (en) Low resistance contact semiconductor diode
JPS5533095A (en) Semiconductor light emitting device applied with semiconductor light waveguide
GB987359A (en) Logical devices
US4730329A (en) Semiconductor laser device
US4910744A (en) Buried heterostructure semiconductor laser device
HITOSHI et al. Semiconductor light emitting device applied with semiconductor light waveguide
GB1044722A (en) Improvements in and relating to asymmetrical conducting devices
JPS5763885A (en) Semiconductor laser device
JPS55140286A (en) Buried heterogeneous structure semiconductor for use in laser
JPS574180A (en) Light-emitting element in gallium nitride
JPS5669879A (en) Semiconductor luminous device with lens
JPS5448569A (en) Photo switch
JPS57139981A (en) Semiconductor light emitting device
JPS57164591A (en) Photosemiconductor device
JPS56100488A (en) Semiconductor laser device
JPS5673485A (en) Semiconductor luminous element
JPS57124489A (en) Two wavelength semiconductor light emitting element
JPS5524418A (en) Light integrated circuit
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
GB1474846A (en) Semiconductor opto-electronic coupling elements
JPS5643790A (en) Semiconductor laser
JPS56112783A (en) Semiconductor laser
JPS5591892A (en) Semiconductor laser light emission device
JPS5781230A (en) Optical modulator