JPS5530312B2 - - Google Patents

Info

Publication number
JPS5530312B2
JPS5530312B2 JP626475A JP626475A JPS5530312B2 JP S5530312 B2 JPS5530312 B2 JP S5530312B2 JP 626475 A JP626475 A JP 626475A JP 626475 A JP626475 A JP 626475A JP S5530312 B2 JPS5530312 B2 JP S5530312B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP626475A
Other languages
Japanese (ja)
Other versions
JPS5181579A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP626475A priority Critical patent/JPS5530312B2/ja
Priority to US05/648,714 priority patent/US4086642A/en
Publication of JPS5181579A publication Critical patent/JPS5181579A/ja
Publication of JPS5530312B2 publication Critical patent/JPS5530312B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP626475A 1975-01-16 1975-01-16 Expired JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP626475A JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-01-16 1975-01-16
US05/648,714 US4086642A (en) 1975-01-16 1976-01-13 Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP626475A JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-01-16 1975-01-16

Publications (2)

Publication Number Publication Date
JPS5181579A JPS5181579A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-07-16
JPS5530312B2 true JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-08-09

Family

ID=11633583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP626475A Expired JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-01-16 1975-01-16

Country Status (2)

Country Link
US (1) US4086642A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5530312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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JPS5188158A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-01-31 1976-08-02
JPS54132174A (en) * 1978-04-06 1979-10-13 Nec Corp Semiconductor device
JPS54137286A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
US4480196A (en) * 1982-05-21 1984-10-30 Northern Telecom Limited Input protection circuits for integrated circuit devices
NL8302963A (nl) * 1983-08-24 1985-03-18 Cordis Europ Inrichting voor het selectief meten van ionen in een vloeistof.
EP0307973B1 (en) * 1983-08-24 1993-11-03 Cordis Europa N.V. An ISFET chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid
JPS6150358A (ja) * 1984-08-20 1986-03-12 Toshiba Corp 半導体集積回路
JPS6211258A (ja) * 1985-07-08 1987-01-20 Nec Corp ＧａＡｓ半導体集積回路
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load
JPS62241429A (ja) * 1986-04-14 1987-10-22 Hitachi Ltd 半導体集積回路装置
US4802054A (en) * 1987-03-13 1989-01-31 Motorola, Inc. Input protection for an integrated circuit
US4835653A (en) * 1988-01-19 1989-05-30 Unisys Corporation ESD protection circuit employing channel depletion
CA1314946C (en) * 1989-02-01 1993-03-23 Colin Harris Protection of analog reference and bias voltage inputs
US5157573A (en) * 1989-05-12 1992-10-20 Western Digital Corporation ESD protection circuit with segmented buffer transistor
US5051860A (en) * 1989-05-12 1991-09-24 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
US5270565A (en) * 1989-05-12 1993-12-14 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
EP0559243B1 (en) * 1992-02-03 1997-04-02 Koninklijke Philips Electronics N.V. Comparator circuit comprising input signal attenuator
FR2708156B1 (fr) * 1993-07-19 1995-10-06 Sgs Thomson Microelectronics Circuit de protection contre des surtensions à forte énergie à tension d'écretage contrôlée.
ATE240587T1 (de) * 1994-02-03 2003-05-15 Infineon Technologies Ag Schutzapparat für einen seriell-geschaltenen mosfet
US5833824A (en) * 1996-11-15 1998-11-10 Rosemount Analytical Inc. Dorsal substrate guarded ISFET sensor
US6456104B1 (en) * 1999-08-18 2002-09-24 International Business Machines Corporation Method and structure for in-line monitoring of negative bias temperature instability in field effect transistors
JP2002299569A (ja) * 2001-03-29 2002-10-11 Sanyo Electric Co Ltd スイッチング用ｍｏｓトランジスタの保護回路
US7212023B2 (en) * 2004-09-07 2007-05-01 Texas Instruments Incorporated System and method for accurate negative bias temperature instability characterization
EP1727203A1 (en) * 2005-05-24 2006-11-29 STMicroelectronics S.r.l. Monolithically integrated power IGBT device (Insulated Gate Bipolar Transistor)
US7855862B1 (en) * 2006-03-28 2010-12-21 Cypress Semiconductor Corporation Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7948015B2 (en) 2006-12-14 2011-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
EP2307577B1 (en) 2008-06-25 2015-06-03 Life Technologies Corporation Methods for measuring analytes using large scale fet arrays
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
JP2013533482A (ja) 2010-06-30 2013-08-22 ライフ テクノロジーズ コーポレーション イオン感応性電荷蓄積回路および方法
CN103189986A (zh) 2010-06-30 2013-07-03 生命科技公司 用于检测和测量化学反应和化合物的晶体管电路
JP5952813B2 (ja) 2010-06-30 2016-07-13 ライフ テクノロジーズ コーポレーション Ｉｓｆｅｔアレイをテストする方法及び装置
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
WO2012006222A1 (en) 2010-07-03 2012-01-12 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
US8796036B2 (en) 2010-09-24 2014-08-05 Life Technologies Corporation Method and system for delta double sampling
US8400211B2 (en) * 2010-10-15 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits with reduced voltage across gate dielectric and operating methods thereof
JP5694020B2 (ja) * 2011-03-18 2015-04-01 トランスフォーム・ジャパン株式会社 トランジスタ回路
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8962366B2 (en) 2013-01-28 2015-02-24 Life Technologies Corporation Self-aligned well structures for low-noise chemical sensors
US8841217B1 (en) 2013-03-13 2014-09-23 Life Technologies Corporation Chemical sensor with protruded sensor surface
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
US9116117B2 (en) 2013-03-15 2015-08-25 Life Technologies Corporation Chemical sensor with sidewall sensor surface
JP2016510895A (ja) 2013-03-15 2016-04-11 ライフ テクノロジーズ コーポレーション 一貫性のあるセンサ表面積を有する化学センサ
CN105283758B (zh) 2013-03-15 2018-06-05 生命科技公司 具有一致传感器表面区域的化学传感器
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
US10605767B2 (en) 2014-12-18 2020-03-31 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
CN111505087A (zh) 2014-12-18 2020-08-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
US9882020B2 (en) * 2015-07-24 2018-01-30 Semiconductor Components Industries, Llc Cascode configured semiconductor component
JP7099640B2 (ja) * 2019-08-06 2022-07-12 富士電機株式会社 半導体装置

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US3303413A (en) * 1963-08-15 1967-02-07 Motorola Inc Current regulator
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3508084A (en) * 1967-10-06 1970-04-21 Texas Instruments Inc Enhancement-mode mos circuitry
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3777216A (en) * 1972-10-02 1973-12-04 Motorola Inc Avalanche injection input protection circuit
JPS5139513A (ja) * 1974-10-01 1976-04-02 Ishikawajima Harima Heavy Ind Kensozaisuratsujiperetaijingusochi
JPS5154778A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-11-08 1976-05-14 Fujitsu Ltd
US3947727A (en) * 1974-12-10 1976-03-30 Rca Corporation Protection circuit for insulated-gate field-effect transistors

Also Published As

Publication number Publication date
US4086642A (en) 1978-04-25
JPS5181579A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-07-16

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