JPS5529752A - Measuring method for ion implantation amount - Google Patents

Measuring method for ion implantation amount

Info

Publication number
JPS5529752A
JPS5529752A JP10271178A JP10271178A JPS5529752A JP S5529752 A JPS5529752 A JP S5529752A JP 10271178 A JP10271178 A JP 10271178A JP 10271178 A JP10271178 A JP 10271178A JP S5529752 A JPS5529752 A JP S5529752A
Authority
JP
Japan
Prior art keywords
fixed part
oxide film
semiconductor
ion implantation
implantation amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10271178A
Other languages
Japanese (ja)
Inventor
Nobuo Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10271178A priority Critical patent/JPS5529752A/en
Publication of JPS5529752A publication Critical patent/JPS5529752A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure the amount of implanted ions rapidly and accurately by forming a MOS capacitor, which becomes a measured sample, in an adequate process.
CONSTITUTION: After oxide film 2a is formed on the surface of semiconductor substrate 1 of silicon, etc., the substrate surface is selectively removed by etching leaving a fixed part of this oxide film 2A and a fixed part of a semiconductor surface layer under it. Then, desired impurity ions are implanted in the fixed part of the semiconductor surface layer via the fixed part of remaining oxide film 2A and then activated and electrode materials 5A and 5B are vapor-deposited to form an electrode layer on the fixed part of oxide film 2A, thereby obtaining a MOS (electrode material 5A-oxide 2A-semiconductor 1) structure. The C-V characteristics of each MOS capacitor is measured by using C-V characteristic measuring apparatus 6 so as to decide on the ion implantation amount or its distribution form.
COPYRIGHT: (C)1980,JPO&Japio
JP10271178A 1978-08-25 1978-08-25 Measuring method for ion implantation amount Pending JPS5529752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10271178A JPS5529752A (en) 1978-08-25 1978-08-25 Measuring method for ion implantation amount

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10271178A JPS5529752A (en) 1978-08-25 1978-08-25 Measuring method for ion implantation amount

Publications (1)

Publication Number Publication Date
JPS5529752A true JPS5529752A (en) 1980-03-03

Family

ID=14334846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10271178A Pending JPS5529752A (en) 1978-08-25 1978-08-25 Measuring method for ion implantation amount

Country Status (1)

Country Link
JP (1) JPS5529752A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288976A (en) * 1988-09-26 1990-03-29 Toshiba Corp Method for testing quality of conductor film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288976A (en) * 1988-09-26 1990-03-29 Toshiba Corp Method for testing quality of conductor film

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