JPS5529161A - Glass for semiconductor passivation - Google Patents
Glass for semiconductor passivationInfo
- Publication number
- JPS5529161A JPS5529161A JP10259578A JP10259578A JPS5529161A JP S5529161 A JPS5529161 A JP S5529161A JP 10259578 A JP10259578 A JP 10259578A JP 10259578 A JP10259578 A JP 10259578A JP S5529161 A JPS5529161 A JP S5529161A
- Authority
- JP
- Japan
- Prior art keywords
- pbo
- weight
- glass
- sio
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000002161 passivation Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract 6
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 6
- 229910011255 B2O3 Inorganic materials 0.000 abstract 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 3
- 238000002844 melting Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000843 powder Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 229910000505 Al2TiO5 Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052878 cordierite Inorganic materials 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000945 filler Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 abstract 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 abstract 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 abstract 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10259578A JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10259578A JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5529161A true JPS5529161A (en) | 1980-03-01 |
| JPS6148774B2 JPS6148774B2 (enrdf_load_stackoverflow) | 1986-10-25 |
Family
ID=14331580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10259578A Granted JPS5529161A (en) | 1978-08-22 | 1978-08-22 | Glass for semiconductor passivation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5529161A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258911A3 (en) * | 2001-03-27 | 2007-02-21 | Sharp Kabushiki Kaisha | Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0713381U (ja) * | 1993-08-10 | 1995-03-07 | 悦郎 手塚 | ゴルフ用グローブ |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130172A (en) * | 1975-04-22 | 1976-11-12 | Jenaer Glaswerk Schott & Gen | Glass for making semiconductor surface nonconductive |
-
1978
- 1978-08-22 JP JP10259578A patent/JPS5529161A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130172A (en) * | 1975-04-22 | 1976-11-12 | Jenaer Glaswerk Schott & Gen | Glass for making semiconductor surface nonconductive |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258911A3 (en) * | 2001-03-27 | 2007-02-21 | Sharp Kabushiki Kaisha | Method of using titanium doped aluminium oxide for passivation of ferroelectric materials and devices including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6148774B2 (enrdf_load_stackoverflow) | 1986-10-25 |
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