JPS5527659A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5527659A JPS5527659A JP10108378A JP10108378A JPS5527659A JP S5527659 A JPS5527659 A JP S5527659A JP 10108378 A JP10108378 A JP 10108378A JP 10108378 A JP10108378 A JP 10108378A JP S5527659 A JPS5527659 A JP S5527659A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass layer
- openings
- semiconductor substrate
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011521 glass Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108378A JPS5527659A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10108378A JPS5527659A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527659A true JPS5527659A (en) | 1980-02-27 |
| JPS6115579B2 JPS6115579B2 (enrdf_load_stackoverflow) | 1986-04-24 |
Family
ID=14291195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10108378A Granted JPS5527659A (en) | 1978-08-18 | 1978-08-18 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527659A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499653A (en) * | 1983-11-03 | 1985-02-19 | Westinghouse Electric Corp. | Small dimension field effect transistor using phosphorous doped silicon glass reflow process |
| JPS61181147A (ja) * | 1985-02-06 | 1986-08-13 | Nec Corp | 半導体装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0412128B1 (en) * | 1989-02-17 | 1994-07-27 | Bell Helicopter Textron Inc. | Method for detecting protective layer on composite materials |
-
1978
- 1978-08-18 JP JP10108378A patent/JPS5527659A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4499653A (en) * | 1983-11-03 | 1985-02-19 | Westinghouse Electric Corp. | Small dimension field effect transistor using phosphorous doped silicon glass reflow process |
| JPS61181147A (ja) * | 1985-02-06 | 1986-08-13 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6115579B2 (enrdf_load_stackoverflow) | 1986-04-24 |
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