JPS5527659A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5527659A
JPS5527659A JP10108378A JP10108378A JPS5527659A JP S5527659 A JPS5527659 A JP S5527659A JP 10108378 A JP10108378 A JP 10108378A JP 10108378 A JP10108378 A JP 10108378A JP S5527659 A JPS5527659 A JP S5527659A
Authority
JP
Japan
Prior art keywords
film
glass layer
openings
semiconductor substrate
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10108378A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115579B2 (OSRAM
Inventor
Kazuhiko Tsuji
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10108378A priority Critical patent/JPS5527659A/ja
Publication of JPS5527659A publication Critical patent/JPS5527659A/ja
Publication of JPS6115579B2 publication Critical patent/JPS6115579B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP10108378A 1978-08-18 1978-08-18 Method of manufacturing semiconductor device Granted JPS5527659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10108378A JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10108378A JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5527659A true JPS5527659A (en) 1980-02-27
JPS6115579B2 JPS6115579B2 (OSRAM) 1986-04-24

Family

ID=14291195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10108378A Granted JPS5527659A (en) 1978-08-18 1978-08-18 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5527659A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499653A (en) * 1983-11-03 1985-02-19 Westinghouse Electric Corp. Small dimension field effect transistor using phosphorous doped silicon glass reflow process
JPS61181147A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68917136T2 (de) * 1989-02-17 1994-12-15 Bell Helicopter Textron Inc., Fort Worth, Tex. Verfahren zum nachweis von schutzschichten auf kompositmaterialien.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499653A (en) * 1983-11-03 1985-02-19 Westinghouse Electric Corp. Small dimension field effect transistor using phosphorous doped silicon glass reflow process
JPS61181147A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6115579B2 (OSRAM) 1986-04-24

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