JPS5526601A - Semiconductor apparatus - Google Patents

Semiconductor apparatus

Info

Publication number
JPS5526601A
JPS5526601A JP288178A JP288178A JPS5526601A JP S5526601 A JPS5526601 A JP S5526601A JP 288178 A JP288178 A JP 288178A JP 288178 A JP288178 A JP 288178A JP S5526601 A JPS5526601 A JP S5526601A
Authority
JP
Japan
Prior art keywords
layer
electrodes
depletion
type
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP288178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6349392B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP288178A priority Critical patent/JPS5526601A/ja
Publication of JPS5526601A publication Critical patent/JPS5526601A/ja
Publication of JPS6349392B2 publication Critical patent/JPS6349392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP288178A 1978-01-14 1978-01-14 Semiconductor apparatus Granted JPS5526601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP288178A JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP288178A JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62257716A Division JPS63132480A (ja) 1987-10-13 1987-10-13 エンハンスメント型絶縁ゲート・トランジスタ

Publications (2)

Publication Number Publication Date
JPS5526601A true JPS5526601A (en) 1980-02-26
JPS6349392B2 JPS6349392B2 (enrdf_load_stackoverflow) 1988-10-04

Family

ID=11541689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP288178A Granted JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Country Status (1)

Country Link
JP (1) JPS5526601A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860078A (en) * 1985-12-11 1989-08-22 U.S. Philips Corp. High-frequency transistor with low internal capacitance and low thermal resistance
US5250255A (en) * 1990-11-30 1993-10-05 Intermetallics Co., Ltd. Method for producing permanent magnet and sintered compact and production apparatus for making green compacts
US5505990A (en) * 1992-08-10 1996-04-09 Intermetallics Co., Ltd. Method for forming a coating using powders of different fusion points
US5672363A (en) * 1990-11-30 1997-09-30 Intermetallics Co., Ltd. Production apparatus for making green compact
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
JPS4911476A (enrdf_load_stackoverflow) * 1972-05-31 1974-01-31
JPS5020675A (enrdf_load_stackoverflow) * 1973-06-22 1975-03-05
JPS5028276A (enrdf_load_stackoverflow) * 1973-07-11 1975-03-22

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
JPS4911476A (enrdf_load_stackoverflow) * 1972-05-31 1974-01-31
JPS5020675A (enrdf_load_stackoverflow) * 1973-06-22 1975-03-05
JPS5028276A (enrdf_load_stackoverflow) * 1973-07-11 1975-03-22

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860078A (en) * 1985-12-11 1989-08-22 U.S. Philips Corp. High-frequency transistor with low internal capacitance and low thermal resistance
US5250255A (en) * 1990-11-30 1993-10-05 Intermetallics Co., Ltd. Method for producing permanent magnet and sintered compact and production apparatus for making green compacts
US5672363A (en) * 1990-11-30 1997-09-30 Intermetallics Co., Ltd. Production apparatus for making green compact
US5505990A (en) * 1992-08-10 1996-04-09 Intermetallics Co., Ltd. Method for forming a coating using powders of different fusion points
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
JP5717063B2 (ja) * 2008-09-30 2015-05-13 国立大学法人 岡山大学 電流制御素子及びその製造方法

Also Published As

Publication number Publication date
JPS6349392B2 (enrdf_load_stackoverflow) 1988-10-04

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