JPS5521166A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5521166A
JPS5521166A JP9426078A JP9426078A JPS5521166A JP S5521166 A JPS5521166 A JP S5521166A JP 9426078 A JP9426078 A JP 9426078A JP 9426078 A JP9426078 A JP 9426078A JP S5521166 A JPS5521166 A JP S5521166A
Authority
JP
Japan
Prior art keywords
mesa
slot
lathe
work
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9426078A
Other languages
Japanese (ja)
Inventor
Yasuo Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9426078A priority Critical patent/JPS5521166A/en
Publication of JPS5521166A publication Critical patent/JPS5521166A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)

Abstract

PURPOSE: To form a uniform mesa slot and various mesa configurations easily and permit a manufacture of an element having a high resistance to pressure with a formation of the mesa slot by an lathe or a milling work.
CONSTITUTION: A multiplicity of semiconductor elements are formed by a diffusion processing on a sheet of semiconductor wafer to form a mesa slot by lathe work or a milling work. In this case, the various mesa configurations 10, 20, 30, and 40 can be formed by changing the tool angle and shape of a bite. Thereafter, an insulation film is formed by a conventional manner.
COPYRIGHT: (C)1980,JPO&Japio
JP9426078A 1978-08-01 1978-08-01 Manufacturing method of semiconductor device Pending JPS5521166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9426078A JPS5521166A (en) 1978-08-01 1978-08-01 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9426078A JPS5521166A (en) 1978-08-01 1978-08-01 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5521166A true JPS5521166A (en) 1980-02-15

Family

ID=14105304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9426078A Pending JPS5521166A (en) 1978-08-01 1978-08-01 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5521166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012230955A (en) * 2011-04-25 2012-11-22 Disco Abrasive Syst Ltd Division method of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012230955A (en) * 2011-04-25 2012-11-22 Disco Abrasive Syst Ltd Division method of wafer

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