JPS55165680A - Preparation of metal gate field effect device - Google Patents

Preparation of metal gate field effect device

Info

Publication number
JPS55165680A
JPS55165680A JP7372479A JP7372479A JPS55165680A JP S55165680 A JPS55165680 A JP S55165680A JP 7372479 A JP7372479 A JP 7372479A JP 7372479 A JP7372479 A JP 7372479A JP S55165680 A JPS55165680 A JP S55165680A
Authority
JP
Japan
Prior art keywords
bell jar
gas
anode
gate
spattering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7372479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226575B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Fukuyama
Shintaro Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7372479A priority Critical patent/JPS55165680A/ja
Publication of JPS55165680A publication Critical patent/JPS55165680A/ja
Publication of JPS6226575B2 publication Critical patent/JPS6226575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP7372479A 1979-06-12 1979-06-12 Preparation of metal gate field effect device Granted JPS55165680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7372479A JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7372479A JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Publications (2)

Publication Number Publication Date
JPS55165680A true JPS55165680A (en) 1980-12-24
JPS6226575B2 JPS6226575B2 (enrdf_load_stackoverflow) 1987-06-09

Family

ID=13526454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7372479A Granted JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Country Status (1)

Country Link
JP (1) JPS55165680A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124281A (ja) * 1984-07-13 1986-02-01 Pioneer Electronic Corp 半導体装置の製造方法
US4912543A (en) * 1983-07-20 1990-03-27 Siemens Aktiengesellschaft Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy
US4912542A (en) * 1987-05-12 1990-03-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20110198033A1 (en) * 2010-02-16 2011-08-18 Canon Anelva Corporation Shutter device and vacuum processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439484U (enrdf_load_stackoverflow) * 1987-09-03 1989-03-09
JPH02294575A (ja) * 1989-05-10 1990-12-05 Ebara Corp 真空排気装置及びその再生方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912543A (en) * 1983-07-20 1990-03-27 Siemens Aktiengesellschaft Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy
JPS6124281A (ja) * 1984-07-13 1986-02-01 Pioneer Electronic Corp 半導体装置の製造方法
US4912542A (en) * 1987-05-12 1990-03-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20110198033A1 (en) * 2010-02-16 2011-08-18 Canon Anelva Corporation Shutter device and vacuum processing apparatus

Also Published As

Publication number Publication date
JPS6226575B2 (enrdf_load_stackoverflow) 1987-06-09

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