JPS55165680A - Preparation of metal gate field effect device - Google Patents

Preparation of metal gate field effect device

Info

Publication number
JPS55165680A
JPS55165680A JP7372479A JP7372479A JPS55165680A JP S55165680 A JPS55165680 A JP S55165680A JP 7372479 A JP7372479 A JP 7372479A JP 7372479 A JP7372479 A JP 7372479A JP S55165680 A JPS55165680 A JP S55165680A
Authority
JP
Japan
Prior art keywords
bell jar
gas
anode
gate
spattering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7372479A
Other languages
Japanese (ja)
Other versions
JPS6226575B2 (en
Inventor
Toshihiko Fukuyama
Shintaro Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP7372479A priority Critical patent/JPS55165680A/en
Publication of JPS55165680A publication Critical patent/JPS55165680A/en
Publication of JPS6226575B2 publication Critical patent/JPS6226575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a gate with a sufficiently low resistance by prescribing both a phosphorus hydride content in inert gas and a spattering power when the gate of a metal with high melting point or of a metallic silicide film with high melting point is formed on an FET. CONSTITUTION:The gas inlets 15, 16 are provided in the upper wall of the bell jar 14 and the supporting plate 11 to which the Si substrate 12 is stuck is suspended from the upper wall through the airtight seal 24. Also the discharge port 17 is provided in the lower wall of the bell jar 14, and the anode 19 with the water cooling part 21 is projected to the inside of the bell jar through the airtight seal 24. Next the magnet 22 that contains the water cooling part 21 and the target plate 13 of Mo or the like is installed about the anode 19 and is surrounded by the magnetic shield 23, and the shutter 18 is provided above the anode 19. In this configuration, Ar gas that contains 4% PH3 and pure Ar gas are fed to the inside of the bell jar while internal pressure of the bell jar is regulated to 3.0X10<-1>Torr, and a spattering is performed with a power of 2.0kW for 10min to obtain a film with a layer resistance of 5X10<-5> OMEGAcm.
JP7372479A 1979-06-12 1979-06-12 Preparation of metal gate field effect device Granted JPS55165680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7372479A JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7372479A JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Publications (2)

Publication Number Publication Date
JPS55165680A true JPS55165680A (en) 1980-12-24
JPS6226575B2 JPS6226575B2 (en) 1987-06-09

Family

ID=13526454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7372479A Granted JPS55165680A (en) 1979-06-12 1979-06-12 Preparation of metal gate field effect device

Country Status (1)

Country Link
JP (1) JPS55165680A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6124281A (en) * 1984-07-13 1986-02-01 Pioneer Electronic Corp Manufacture of semiconductor device
US4912542A (en) * 1987-05-12 1990-03-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US4912543A (en) * 1983-07-20 1990-03-27 Siemens Aktiengesellschaft Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy
US20110198033A1 (en) * 2010-02-16 2011-08-18 Canon Anelva Corporation Shutter device and vacuum processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6439484U (en) * 1987-09-03 1989-03-09
JPH02294575A (en) * 1989-05-10 1990-12-05 Ebara Corp Vacuum exhaust device and regeneration method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912543A (en) * 1983-07-20 1990-03-27 Siemens Aktiengesellschaft Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy
JPS6124281A (en) * 1984-07-13 1986-02-01 Pioneer Electronic Corp Manufacture of semiconductor device
US4912542A (en) * 1987-05-12 1990-03-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US20110198033A1 (en) * 2010-02-16 2011-08-18 Canon Anelva Corporation Shutter device and vacuum processing apparatus

Also Published As

Publication number Publication date
JPS6226575B2 (en) 1987-06-09

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