JPS5891168A - Magnetron type sputtering device - Google Patents

Abstract

PURPOSE:To sputter a ferromagnetic material through a magnetron type sputtering device, by providing grooves in the surface of a ferromagnetic material target, and giving N or S polarity to its opposite end part. CONSTITUTION:In the surface of a target 1 made of a ferromagnetic material such as Fe, Ni, and Co, grooves 3 are formed and on its reverse surface, an E- shaped magnet 3 is provided. The device is evacuated to a low vacuum, Ar gas is admitted, and the magnet 2 established a magnetic field to the target 1. The thickness of the target 1 is reduced partially at the grooves 3, so magnetic saturation is easily obtained by using a relatively weak magnet 2 to form lines of magnetic force 15 between the N and S poles. At this time, a voltage from a power source 12 is applied between the target 1 as a cathode and an anode 11 to cause glow discharged, and then the target material is hit out of the grooves 3 by the impact of cations to form a plating film 16 of the ferromagnetic material on the surface of a substrate 13, thus performing low-temperature speedy magnetron sputtering.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetron type sputtering apparatus, and more particularly to a magnetron type sputtering apparatus in which the material and θ shape of the target are improved.

In recent years, vacuum plating methods such as vapor deposition, ion blating, and sputtering have come into widespread use as non-polluting plating methods. These methods are
In either case, the surface temperature of the plated substrate increases, and especially when the plated substrate is made of plastic or the like, there is a problem that the substrate is deteriorated. Among these, the sputtering method uses glow discharge in a low vacuum of inert gas.
During the discharge, the cathode (target) metal is ejected by the impact of cations and adheres to the surface of the plating substrate.A plating film is obtained without changing the composition of the alloy, and it is made of high melting point material. It has the feature that it can also be plated. However, this method has the drawbacks of slow sputtering speed, high working pressure, and, as mentioned above, an increase in the surface temperature of the plated substrate, so it has been applied only in limited fields.

In order to improve this point, a magnetron type sputtering device was developed in which a magnet is placed on the back surface of the target so that the magnet is applied orthogonally to the electric field in the discharge space. This device prevents electrons from flowing into the plating substrate placed opposite the cathode (target) by bending the electrons generated by the discharge into a magnetic field and performing a drift motion. This suppresses the temperature rise of the plated substrate. Moreover, in this device, the lines of magnetic force have long continuous orbits near the target surface, forming a high-density electron cloud, so gas can be efficiently ionized even at low pressures, and the temperature of the plated substrate does not rise even when high power is applied. This allows for high-speed sputtering, which is similar to vapor deposition, and enables the formation of good plating films on plated substrates that are easily susceptible to heat damage, such as plastics.

However, it has been common knowledge that a ferromagnetic material is not used as a material for the target of this magnet type sputtering apparatus. The reason for this is that the presence of magnetic lines of force near the surface of the target is a requirement for low-temperature, high-speed sputtering, so when the target is made of a ferromagnetic material such as iron, nickel, or cobalt, the lines of magnetic force are This rounding was thought to make it difficult for the rounding to come out. Moreover, since the target is made of a sputtered material, the plated film formed is limited to materials that are not attracted to the magnet and, furthermore, have relatively excellent formability.

Further, since the target itself is made of sputtered material, it is consumed as plating progresses, and a new target must be attached as needed, resulting in poor workability.

In view of these points, it is an object of the present invention to provide a magnetron type sputtering apparatus that is capable of sputtering all kinds of materials including ferromagnetic materials, and is also capable of sputtering at low temperatures and high speeds.

Hereinafter, the present invention will be explained in detail with reference to the drawings.

FIG. 1 shows an embodiment of the present invention, and numeral 1 in the figure is a ferromagnetic target made of iron, nickel, cobalt, or an alloy thereof. A shaped magnet 2 is provided. Further, two U-shaped grooves 3.3 are formed on the surface of the target 1 located between the N pole and the 8 pole of the magnet 2, and one of the opposing ends of the grooves 3,3 is formed. is the N pole, and the other is the 8 pole. A cover 4 for supporting the magnet 2 is attached to the magnet 2. Further, this cover 4 is attached to an opening of a vacuum wall 6 via an insulator 5, and the vacuum wall 6 isolates an atmospheric side 7 from an internal vacuum side 8.

In addition, the magnet 2 is provided with a cooling water inflow pipe 9 that passes through the cover 4.
and an outflow pipe 10 are provided to constantly cool the magnet 2.

Reference numeral 11 denotes an anode disposed facing the target 1 serving as a cathode, and is connected to the magnet 2 on the cathode side via a power source 12. In the figure, 13 indicates a plated substrate, and 14 indicates a gasket.

However, in the above magnetron type sputtering apparatus,
To explain its operation, first, the inside of the device is made into a low vacuum, argon gas is introduced, and the internal pressure is maintained at a predetermined level. On the other hand, when a magnetic field is applied to the target 1 by the magnet 2, the thickness of the target 1 is partially thinned at the groove portion 3.3, so even if the magnet 2 with a relatively weak magnetic force is used, it is easily magnetized. The saturated body is reached, and magnetic field lines 1 are formed at groove 3.3 as shown by the broken line.
5 is formed between the north and south poles. In this state, power supply 1
2, when a voltage is applied between the target 1 which becomes a cathode and the anode 11, a glow discharge occurs and the sputtering material constituting the target 1 is exposed to the groove 3 due to the impact of cations.
．． 3, and adheres to the surface of the plated substrate 13 to form a ferromagnetic plating film 16, which is subjected to low-temperature, high-speed magnetron sputtering.

Note that the shape of the groove 3 is not limited to a U-shape as shown in FIG. 1, but may be V-shape as shown in FIG. 2, or a dish-shape as shown in FIG. It may be of any shape.

Furthermore, in the present invention, the target 1 is not made of the sputtering material itself, but is made of a ferromagnetic material as shown in FIG.
Sputtering may be performed by filling the sputtering material 17 made of a non-magnetic material into the groove portion 3.
Correspondingly, a feeder 18.18 is provided which supplies the sputtered material 17 to the groove 3.

In this device, the magnetic force of the magnet 2 is adjusted, and at 30 grooves,
When one of the ends is set as the north pole and the other as the south pole, and magnetic lines of force 15 are formed between them, the target 1 made of ferromagnetic material becomes stable against sputtering, and the groove 3 is filled. The sputtered material 17 made of a non-magnetic material is preferentially sputtered onto the plated substrate 13.
The plating film 16 can be formed on the surface at low temperature and high speed.

Therefore, the sputtering material 12 is most effective when forming the plating film 16 using a powdered or granular material, a material with poor formability, or an expensive material. Further, by filling the sputtering material 17 which is a mixture of powders and particles of different metals, the alloy plating film 16 having a predetermined composition ratio can be easily formed. Furthermore, since the above-mentioned apparatus is equipped with a feeder 18, the sputtering material 11 is continuously supplied, and the workability is significantly improved compared to the conventional method in which the sputtering material itself constitutes the target and gradually wears out. can be improved.

In the above embodiment, the feeder 18 is provided, but if the sputtered material 11 is in the form of a foil, it is difficult to automatically supply the sputtered material 11, so the feeder 18 may not necessarily be provided.

Next, a specific table embodiment of the present invention will be described.

Example 1 In a sputtering apparatus as shown in FIG.
8 was not provided, the target 1 was made of iron, and a groove 3.3 with a depth of 4 m was formed on the surface of the target 1. A silver ribbon material was inserted and filled into the groove 3.3 as the sputtering material 17. In this state, evacuate the inside of the device and introduce argon gas, increasing the argon partial pressure to 3
10"-" Torr, DC voltage 420V, current 2
I gave power to A. In addition, using a plastic plate as the plating substrate 13, sputtering was performed with the distance between the plating substrate 13 and the target 1 being 100 nm, and a well-formed sputtering film was formed on the surface of the plastic plate at a film formation rate of 400 mm/min. was formed, and no thermal deformation was observed on the surface of the plastic plate.

Embodiment 2 In a sputtering apparatus as shown in FIG.
The target 1 was made of iron and had a dish-shaped groove 3 formed on its surface as shown in FIG. 3. This groove 3 is filled with a sputtering material 17, which is a mixture of about 50 meshes of gold powder and about 50 meshes of silver powder mixed in advance at a weight ratio of 1:1. The partial pressure is 3 x 10-”To
When sputtering was performed on the surface of the plated substrate 130 made of a plastic plate at a DC voltage of 400 V and a current of 1.5 A, the 300-th on-guest surface appeared on the surface.
A plating film of Au-Ag alloy was obtained at a film-forming rate of m/min.

Example 3 In a sputtering apparatus equipped with two feeders 18 and 18 as shown in FIG. 4, the target 1 was made of iron, and a plate-shaped groove 3 as shown in FIG. 3 was formed on the surface of the target. was used. Metallic chromium having a particle size of 0.5 to 1 square inch was continuously supplied to the groove 3 as the sputtering material 11 from the feeder 18 . Also, the argon partial pressure inside the device is 2.2 x 1
0-” Torr, DC voltage 400V, current 2.5A
When sputtering was performed on the surface of the plating substrate 13 made of a plastic plate, a highly pure metal chromium plating film was formed, and continuous operation was possible.

Embodiment 4 Feeders 18, . . . as shown in FIG. 1. In a sputtering apparatus equipped with two IIs, the target 1 was made of nickel, one feeder 18 was filled with about 50 meshes of gold powder, and the other feeder 18 was filled with about 50 meshes of tin powder.

In addition, the argon partial pressure inside the device was set to 2.2 x 10-”To
rr.

After performing sputtering with a DC voltage of 450 V and a current of 2.5 A while supplying gold powder as sputtering material 17 from one feeder 18 to the groove 3, tin powder is supplied as another sputtering material 17 from the other feeder 18 to the other sputtering material 17. Sputtering was performed by supplying the material to the groove 3, and this operation was performed alternately. As a result, a multilayer plating film of gold and tin was formed on the surface of the plated substrate 13 made of plastic, and no lateral thermal deformation was observed on the surface of the plastic.

As explained above, according to the magnetron type sputtering apparatus according to the present invention, it is possible to perform low-temperature, high-speed sputtering of all kinds of materials including ferromagnetic materials, which was previously considered impossible. Since the sputtering material filled here can be preferentially sputtered, it is possible to easily sputter materials with poor plate forming properties or materials in any shape such as powder, granules, or foil. Furthermore, according to the present invention, by providing a feeder for supplying sputtering material in correspondence with the groove provided in the target, it is possible to perform continuous operation. The workability can be significantly improved compared to the conventional method.

[Brief Description of the Drawings] Figure 1 is a front sectional view of a magneto-on type sputtering device with grooves provided on the surface of the target, and Figures 2 and 3 are the main parts of the target showing different shapes of the grooves. FIG. 4 is a front sectional view of a magnetron type sputtering device in which a feeder is provided corresponding to the groove. 1...Target, 2...Magnet, 3...Groove, 6
:・. Vacuum wall, 11... Anode, 12... Power supply, 13...
Plating substrate, 15... Magnetic field lines, 16... Plating frozen film, 17... Sputtering material, 18... Feeder 7゜ Applicant's agent Patent attorney Takehiko Suzue Figure 1 z Figure 2 Figure 3 figure

Claims (2)

[Claims] (1) In a magnetron-type sputtering device in which a magnet is provided on the back surface of a target, the target is formed of a ferromagnetic material such as iron, nickel, cobalt, or an alloy thereof, and a magnet is placed between the N and S poles of the magnet. A magnetron type sputtering apparatus characterized in that one or more grooves are provided on the surface of a target, and opposing ends of the grooves serve as north poles or south poles. (2) Corresponding to the grooves provided on the surface of the target,
A magnetron type sputtering apparatus according to claim 1, further comprising a feeder for supplying sputtering material.