JPS55165627A - Method for diffusing impurity into semiconductor - Google Patents

Method for diffusing impurity into semiconductor

Info

Publication number
JPS55165627A
JPS55165627A JP7265479A JP7265479A JPS55165627A JP S55165627 A JPS55165627 A JP S55165627A JP 7265479 A JP7265479 A JP 7265479A JP 7265479 A JP7265479 A JP 7265479A JP S55165627 A JPS55165627 A JP S55165627A
Authority
JP
Japan
Prior art keywords
substrate
sio2
deposited
diffused
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7265479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152565B2 (https=
Inventor
Masamichi Manabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP7265479A priority Critical patent/JPS55165627A/ja
Publication of JPS55165627A publication Critical patent/JPS55165627A/ja
Publication of JPS6152565B2 publication Critical patent/JPS6152565B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)
JP7265479A 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor Granted JPS55165627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7265479A JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7265479A JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Publications (2)

Publication Number Publication Date
JPS55165627A true JPS55165627A (en) 1980-12-24
JPS6152565B2 JPS6152565B2 (https=) 1986-11-13

Family

ID=13495576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7265479A Granted JPS55165627A (en) 1979-06-09 1979-06-09 Method for diffusing impurity into semiconductor

Country Status (1)

Country Link
JP (1) JPS55165627A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168564A (ja) * 2012-02-16 2013-08-29 Ngk Insulators Ltd 半導体装置及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840805A (https=) * 1971-09-23 1973-06-15
JPS4844271A (https=) * 1971-10-07 1973-06-26
JPS4973077A (https=) * 1972-11-14 1974-07-15

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840805A (https=) * 1971-09-23 1973-06-15
JPS4844271A (https=) * 1971-10-07 1973-06-26
JPS4973077A (https=) * 1972-11-14 1974-07-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168564A (ja) * 2012-02-16 2013-08-29 Ngk Insulators Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6152565B2 (https=) 1986-11-13

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