JPS55162610A - Push pull output circuit - Google Patents
Push pull output circuitInfo
- Publication number
- JPS55162610A JPS55162610A JP6991679A JP6991679A JPS55162610A JP S55162610 A JPS55162610 A JP S55162610A JP 6991679 A JP6991679 A JP 6991679A JP 6991679 A JP6991679 A JP 6991679A JP S55162610 A JPS55162610 A JP S55162610A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- circuit
- output circuit
- bias
- class
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To make bias set for output MOSFET at the class AB operation, by providing the temperature compensation means having positive temperature coefficient in the bias circuit. CONSTITUTION:In the push-pull output circuit constituted with a power MOSFET, the circuit is at the class B operation under the idling current (bias) in which the temperature coefficient of FET is zeroed. On the other hand, when the push-pull circuit is biased to the class AB, the temperature coefficient of MOSFETs(Q1, Q2) is negative, but compensation is made with a positive temperature coefficient of the saturation voltage between the collector and emitter of the bipolar transistor Q4 in the bias circuit. That is, since the temperature coefficient of the output circuit is zero, the idling current is set so that the temperature coefficient of the said bipolar transistor Q4 is in agreement with that of MOSFET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6991679A JPS55162610A (en) | 1979-06-06 | 1979-06-06 | Push pull output circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6991679A JPS55162610A (en) | 1979-06-06 | 1979-06-06 | Push pull output circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55162610A true JPS55162610A (en) | 1980-12-18 |
Family
ID=13416485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6991679A Pending JPS55162610A (en) | 1979-06-06 | 1979-06-06 | Push pull output circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55162610A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829886A1 (en) * | 2001-09-18 | 2003-03-21 | St Microelectronics Sa | Class AB amplifier circuit and its application in generating high-voltage video signal |
-
1979
- 1979-06-06 JP JP6991679A patent/JPS55162610A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829886A1 (en) * | 2001-09-18 | 2003-03-21 | St Microelectronics Sa | Class AB amplifier circuit and its application in generating high-voltage video signal |
US6784739B2 (en) | 2001-09-18 | 2004-08-31 | Stmicroelectronics Sa | Class AB amplifier circuit |
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