JPS55161067A - Manufacturing apparatus of thin film - Google Patents

Manufacturing apparatus of thin film

Info

Publication number
JPS55161067A
JPS55161067A JP6895079A JP6895079A JPS55161067A JP S55161067 A JPS55161067 A JP S55161067A JP 6895079 A JP6895079 A JP 6895079A JP 6895079 A JP6895079 A JP 6895079A JP S55161067 A JPS55161067 A JP S55161067A
Authority
JP
Japan
Prior art keywords
thin film
vessel
reaction gas
sputtering
flowing amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6895079A
Other languages
Japanese (ja)
Other versions
JPS6312938B2 (en
Inventor
Taiji Shimomoto
Susumu Miyagawa
Shigetoshi Hiratsuka
Yasuo Tanaka
Akio Kumada
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6895079A priority Critical patent/JPS55161067A/en
Publication of JPS55161067A publication Critical patent/JPS55161067A/en
Publication of JPS6312938B2 publication Critical patent/JPS6312938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To produce the film characteritsitc in the lot and between the lots with a good reproducibility, by arranging adjusting means of reaction gas component ratio and control apparatus of reaction gas flowing amount etc. based on the detection signal of sputtering power source fluctuation at the reactive.sputtering apparatus. CONSTITUTION:Thin film manufacturing apparatus composed of the Ar gas introducing opening 10, the reaction gas N2 introducing opening 11, the reactive reaction vessel 1 and the electric power source 8 etc., is constructed as follows; Output signal of the gas analysis means 13 in the vessel 1, is input in the computor 16 and N2 is controlled so as to be the set up value of N2/Ar through the flowing amount controller 19 and valve by comparing with the standard value by comparing means. On the one hand, sputtering voltage of the target 7 measured by the direct current voltmeter 9, is input in the computor 16 and is compared with the standard value and then, thin film is formed on the substrate placed on the guide rail 2', by controlling the total amount of reaction gas at a fixed value based on the above difference through the flowing amount controller 17 and the valve 18. Chemical thin film forming vessel and epitaxial thin film forming vessel may be used for the above mentioned vessel 1.
JP6895079A 1979-06-04 1979-06-04 Manufacturing apparatus of thin film Granted JPS55161067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6895079A JPS55161067A (en) 1979-06-04 1979-06-04 Manufacturing apparatus of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6895079A JPS55161067A (en) 1979-06-04 1979-06-04 Manufacturing apparatus of thin film

Publications (2)

Publication Number Publication Date
JPS55161067A true JPS55161067A (en) 1980-12-15
JPS6312938B2 JPS6312938B2 (en) 1988-03-23

Family

ID=13388446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6895079A Granted JPS55161067A (en) 1979-06-04 1979-06-04 Manufacturing apparatus of thin film

Country Status (1)

Country Link
JP (1) JPS55161067A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967619A (en) * 1982-10-12 1984-04-17 Kokusai Electric Co Ltd Controller for pressure of semiconductor manufacturing device with decompression vessel
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPS59185776A (en) * 1983-04-04 1984-10-22 ボ−グ・ワ−ナ−・コ−ポレ−シヨン Iv b group metal quick reactive sputtering
JP2000026967A (en) * 1998-04-16 2000-01-25 Boc Group Inc:The Cascade control of reactive sputtering device
JP2002275628A (en) * 2001-03-21 2002-09-25 Sumitomo Bakelite Co Ltd Sputtering film-forming method
JP2002322561A (en) * 2001-04-25 2002-11-08 Sumitomo Bakelite Co Ltd Sputtering film deposition method
JP2010199305A (en) * 2009-02-25 2010-09-09 Mitsubishi Heavy Ind Ltd Method of manufacturing photoelectric conversion device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006045611A (en) * 2004-08-04 2006-02-16 Nippon Telegr & Teleph Corp <Ntt> Sputter film deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362788A (en) * 1976-11-15 1978-06-05 Commissariat Energie Atomique Method of controlling thin film deposit by active sputtering and active sputtering apparatus for carrying out said method
JPS54103790A (en) * 1978-02-01 1979-08-15 Nec Corp Sputtering apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362788A (en) * 1976-11-15 1978-06-05 Commissariat Energie Atomique Method of controlling thin film deposit by active sputtering and active sputtering apparatus for carrying out said method
JPS54103790A (en) * 1978-02-01 1979-08-15 Nec Corp Sputtering apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967619A (en) * 1982-10-12 1984-04-17 Kokusai Electric Co Ltd Controller for pressure of semiconductor manufacturing device with decompression vessel
JPH0510131B2 (en) * 1982-10-12 1993-02-08 Kokusai Electric Co Ltd
EP0120307A2 (en) * 1983-02-25 1984-10-03 Toyota Jidosha Kabushiki Kaisha Apparatus and method for plasma treatment of resin material
JPS59185776A (en) * 1983-04-04 1984-10-22 ボ−グ・ワ−ナ−・コ−ポレ−シヨン Iv b group metal quick reactive sputtering
JP2000026967A (en) * 1998-04-16 2000-01-25 Boc Group Inc:The Cascade control of reactive sputtering device
JP4560151B2 (en) * 1998-04-16 2010-10-13 リンデ インコーポレイテッド Cascade control of reactive sputtering equipment
JP2002275628A (en) * 2001-03-21 2002-09-25 Sumitomo Bakelite Co Ltd Sputtering film-forming method
JP2002322561A (en) * 2001-04-25 2002-11-08 Sumitomo Bakelite Co Ltd Sputtering film deposition method
JP2010199305A (en) * 2009-02-25 2010-09-09 Mitsubishi Heavy Ind Ltd Method of manufacturing photoelectric conversion device

Also Published As

Publication number Publication date
JPS6312938B2 (en) 1988-03-23

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