JPS55160454A - Mos type capacitor - Google Patents

Mos type capacitor

Info

Publication number
JPS55160454A
JPS55160454A JP6826379A JP6826379A JPS55160454A JP S55160454 A JPS55160454 A JP S55160454A JP 6826379 A JP6826379 A JP 6826379A JP 6826379 A JP6826379 A JP 6826379A JP S55160454 A JPS55160454 A JP S55160454A
Authority
JP
Japan
Prior art keywords
mos type
type capacitor
increase
substrate
increasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6826379A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshihara
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6826379A priority Critical patent/JPS55160454A/en
Publication of JPS55160454A publication Critical patent/JPS55160454A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To increase the capacity of an MOS type capacitor by increasing the effective surface area thereof with ruggedness formed on the channel region of an Si substrate. CONSTITUTION:When V-shaped grooves are, for example, formed on the Si substrate in a channel region 6', it can increase the effective area. Therefore, it can increase the MOS capacity without increasing the occupying area so as to obtain a memory cell having one transistor and one capacitor adapted for high density.
JP6826379A 1979-05-31 1979-05-31 Mos type capacitor Pending JPS55160454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6826379A JPS55160454A (en) 1979-05-31 1979-05-31 Mos type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6826379A JPS55160454A (en) 1979-05-31 1979-05-31 Mos type capacitor

Publications (1)

Publication Number Publication Date
JPS55160454A true JPS55160454A (en) 1980-12-13

Family

ID=13368684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6826379A Pending JPS55160454A (en) 1979-05-31 1979-05-31 Mos type capacitor

Country Status (1)

Country Link
JP (1) JPS55160454A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100849077B1 (en) * 2002-05-30 2008-07-30 매그나칩 반도체 유한회사 Method of manufacturing system on chip device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100849077B1 (en) * 2002-05-30 2008-07-30 매그나칩 반도체 유한회사 Method of manufacturing system on chip device

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