JPS55159540A - Manufacture of fluorescent face - Google Patents
Manufacture of fluorescent faceInfo
- Publication number
- JPS55159540A JPS55159540A JP6819679A JP6819679A JPS55159540A JP S55159540 A JPS55159540 A JP S55159540A JP 6819679 A JP6819679 A JP 6819679A JP 6819679 A JP6819679 A JP 6819679A JP S55159540 A JPS55159540 A JP S55159540A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- vacuum
- impurity
- terbium
- pot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
PURPOSE:To improve the brightness, and the contrast by vacuum depositing a simple substance, mixture and compound of chemically stable metal having large ionic radius simultaneosly with cesium iodide thereby forming an impurity layer at the circumference of cecium iodide pillar crystal body. CONSTITUTION:A fluorescent substrate 5 is arranged in a vacuum chamber 4 of a vacuum evaporator 3. Furthermore a pot 7 containing a fluorescent body 6 such as activated cesium iodide CsI and a pot 9 containing a impurity 8 of simple substance, mixture or compound of mechanically stable metal having high ionic radius such as europium, dysprosium, gadolinium, lanthanum, gold, platinum, terbium, terbium, lutetium are arranged then heated by heaters 10, 11 to vacuum deposit the fluorescent body and the impurity simultaneously. Consequently an impurity layer is formed at the circumference of CsI pillar crystal to limit the light emitted in the crystal within said crystal, resulting in the improvement of luminance and contrast.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6819679A JPS55159540A (en) | 1979-05-30 | 1979-05-30 | Manufacture of fluorescent face |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6819679A JPS55159540A (en) | 1979-05-30 | 1979-05-30 | Manufacture of fluorescent face |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55159540A true JPS55159540A (en) | 1980-12-11 |
Family
ID=13366786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6819679A Pending JPS55159540A (en) | 1979-05-30 | 1979-05-30 | Manufacture of fluorescent face |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55159540A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6021173A (en) * | 1997-04-02 | 2000-02-01 | U.S. Philips Corporation | X-ray apparatus with sensor matrix |
-
1979
- 1979-05-30 JP JP6819679A patent/JPS55159540A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6021173A (en) * | 1997-04-02 | 2000-02-01 | U.S. Philips Corporation | X-ray apparatus with sensor matrix |
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