JPS55158671A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55158671A
JPS55158671A JP6864579A JP6864579A JPS55158671A JP S55158671 A JPS55158671 A JP S55158671A JP 6864579 A JP6864579 A JP 6864579A JP 6864579 A JP6864579 A JP 6864579A JP S55158671 A JPS55158671 A JP S55158671A
Authority
JP
Japan
Prior art keywords
layers
base layer
dotted
layer
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6864579A
Other languages
Japanese (ja)
Other versions
JPS6043667B2 (en
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6864579A priority Critical patent/JPS6043667B2/en
Publication of JPS55158671A publication Critical patent/JPS55158671A/en
Publication of JPS6043667B2 publication Critical patent/JPS6043667B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve di/dt withstanding amount by providing a dottd layer at the cross points of a plurality of straight lines which are in parallel with the two PN- junction planes formed by two neighboring radial base layers and the second emitter layers between said two base layers. CONSTITUTION:A plurality of dotted layers 20 reaching a cathode base layer 4 from the surface of a cathode-emitter layer 7 between a radial base layer 8a and another radial base layer 8b adjacent to said base layer 8a with 60 deg. apart is provided. The dotted layers 20 are located at the cross points of a plurality of straight lines in parallel with PN-junction planes 14 formed by said base layer 8a and 8b and said cathode emitter 7. The neighboring three dots form a regular triangle whose one side is W. In this arrangement, the dotted layers which are aligned in the direction of the diameter are located at the points with the equal distance from the PN-junction plane 14. Therefore, the spread of the on-currents is uniform, and the di/dt withstanding amount is improved.
JP6864579A 1979-05-29 1979-05-29 semiconductor equipment Expired JPS6043667B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6864579A JPS6043667B2 (en) 1979-05-29 1979-05-29 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6864579A JPS6043667B2 (en) 1979-05-29 1979-05-29 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS55158671A true JPS55158671A (en) 1980-12-10
JPS6043667B2 JPS6043667B2 (en) 1985-09-30

Family

ID=13379650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6864579A Expired JPS6043667B2 (en) 1979-05-29 1979-05-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6043667B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145864A (en) * 1984-12-20 1986-07-03 Fuji Electric Co Ltd Thyristor
US10355117B2 (en) 2014-07-31 2019-07-16 Abb Schweiz Ag Phase control thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145864A (en) * 1984-12-20 1986-07-03 Fuji Electric Co Ltd Thyristor
US10355117B2 (en) 2014-07-31 2019-07-16 Abb Schweiz Ag Phase control thyristor

Also Published As

Publication number Publication date
JPS6043667B2 (en) 1985-09-30

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