JPS5466783A - Thyristor - Google Patents

Abstract

PURPOSE: To increase the di/dt chracteristics and high frequency power carrying capacity, by constituting the second control electrode provided on the surface of thyristor with the center and a plurality of extensions leading radially, and by taking narrow the width of the extensions toward the circumference and wider at the center of PN junction.

CONSTITUTION: The thyristor is constituted with the P type first emitter layer 11, N type first base layer 12, P type second base layer 13, N type second emitter layer 14, and N type auxiliary emitter layer 15. Thus, the three layer construction represented in the region 22 is taken as the first control region, and the three layer construction represented in the region 23 is taken as the second control region. Next, the second control electrode 31 is placed in the second control region, and the shape is taken as the extensions of a plurality projected radially from the center. In this case, the extensions are made not as straight line but narrow toward the circumference and wide at the center. That is, the distance g(x) from the electrode 101 side edge 104 to the circumference 107 of the PN junction 35 is taken narrower toward the circumference of tip, and the main current in the auxiliary thyristor region is uniformly distributed to the main thyristor region.

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