JPS55103771A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55103771A JPS55103771A JP1015979A JP1015979A JPS55103771A JP S55103771 A JPS55103771 A JP S55103771A JP 1015979 A JP1015979 A JP 1015979A JP 1015979 A JP1015979 A JP 1015979A JP S55103771 A JPS55103771 A JP S55103771A
- Authority
- JP
- Japan
- Prior art keywords
- elements
- regions
- distance
- region
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To form two elements equivalently by a method wherein a quadrilateral region, with each of its vertices less than 180°, is divided into 4 regions by its diagonals, an element is provided in each region, elements in regions not adjacent to each other are electrically connected in parallel.
CONSTITUTION: In the J-FET, a square region, with all of its vertices being 90°, are divided into four regions, an element is formed in each of the resulting triangles, and two elements in regions not adjacent to each other are electrically connected. This J-FET is formed in the direction inclined by an angle θ" with respect to the inclination of the epitaxial layer. The distance between the two elements, x0, multiplied by √2/2 becomes the maximum for the channel distance x. But since x0 is the distance between the two elements, it becomes very samll, so that the channel thicknesses of the two elements become almost the same for the deviation of the epitaxial layer in any direction.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1015979A JPS55103771A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1015979A JPS55103771A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55103771A true JPS55103771A (en) | 1980-08-08 |
JPS6253954B2 JPS6253954B2 (en) | 1987-11-12 |
Family
ID=11742493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1015979A Granted JPS55103771A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103771A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214398A (en) * | 2006-02-10 | 2007-08-23 | Nec Corp | Semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943878U (en) * | 1972-07-20 | 1974-04-17 |
-
1979
- 1979-01-31 JP JP1015979A patent/JPS55103771A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943878U (en) * | 1972-07-20 | 1974-04-17 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214398A (en) * | 2006-02-10 | 2007-08-23 | Nec Corp | Semiconductor integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6253954B2 (en) | 1987-11-12 |
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