JPS55150273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55150273A
JPS55150273A JP5813179A JP5813179A JPS55150273A JP S55150273 A JPS55150273 A JP S55150273A JP 5813179 A JP5813179 A JP 5813179A JP 5813179 A JP5813179 A JP 5813179A JP S55150273 A JPS55150273 A JP S55150273A
Authority
JP
Japan
Prior art keywords
emitter
connecting hole
intersection
base
lattice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5813179A
Other languages
Japanese (ja)
Inventor
Yoichi Nakamura
Kazutoshi Ashikawa
Takao Miyazaki
Junichiro Kagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5813179A priority Critical patent/JPS55150273A/en
Publication of JPS55150273A publication Critical patent/JPS55150273A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To prevent the deterioration or short of an emitter-to-base withstand voltage VEB of a semiconductor device due to the excessive etching in case of forming a connecting hole by forming largely the intersection of an emitter lattice. CONSTITUTION:The intersection 2c of the emitter layers 2a, 2b is expanded obliquely, and the corners of the base layer 6 are cut. The portion obliquely expanded forms at approx. 45 deg. with respect to the lattice direction, and is formed partly at approx. twice the square or rectangle 9 of the area of the intersection. The emitter connecting hole 10 is formed similarly to thereto in the square 9, with one side formed with the width d1 of the emitter lattice or larger. The emitter electrode wire 5 is superimposed with the hole 10 to form slightly wider. The base connecting hole 7 and the base electrode wire 8 are formed in the same as the conventional shape. In this manner, when the connecting hole is formed, no overetching occurs nor deterioration of withstand voltage and short and the like. The unit area is reduced to improve the high frequency characteristics.
JP5813179A 1979-05-14 1979-05-14 Semiconductor device Pending JPS55150273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5813179A JPS55150273A (en) 1979-05-14 1979-05-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5813179A JPS55150273A (en) 1979-05-14 1979-05-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55150273A true JPS55150273A (en) 1980-11-22

Family

ID=13075420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5813179A Pending JPS55150273A (en) 1979-05-14 1979-05-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55150273A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62180251U (en) * 1986-04-24 1987-11-16

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025306A (en) * 1973-07-06 1975-03-18
JPS50145083A (en) * 1974-05-11 1975-11-21

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025306A (en) * 1973-07-06 1975-03-18
JPS50145083A (en) * 1974-05-11 1975-11-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62180251U (en) * 1986-04-24 1987-11-16
JPH0351650Y2 (en) * 1986-04-24 1991-11-06

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