JPS55149193A - Manufacture of silicon carbide substrate - Google Patents

Manufacture of silicon carbide substrate

Info

Publication number
JPS55149193A
JPS55149193A JP5612979A JP5612979A JPS55149193A JP S55149193 A JPS55149193 A JP S55149193A JP 5612979 A JP5612979 A JP 5612979A JP 5612979 A JP5612979 A JP 5612979A JP S55149193 A JPS55149193 A JP S55149193A
Authority
JP
Japan
Prior art keywords
substrate
sic
layer
temp
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5612979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6120516B2 (enrdf_load_stackoverflow
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612979A priority Critical patent/JPS55149193A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55149193A publication Critical patent/JPS55149193A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6120516B2 publication Critical patent/JPS6120516B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5612979A 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149193A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5612979A JPS55149193A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612979A JPS55149193A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149193A true JPS55149193A (en) 1980-11-20
JPS6120516B2 JPS6120516B2 (enrdf_load_stackoverflow) 1986-05-22

Family

ID=13018456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612979A Granted JPS55149193A (en) 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149193A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05310349A (ja) * 1991-09-16 1993-11-22 Textil Mas Fab Dr Ernst Fehrer Ag 循環する無端保持帯上へ繊維束を載せる装置
JPH07335562A (ja) * 1994-06-10 1995-12-22 Hoya Corp 炭化珪素の成膜方法
JP2011151317A (ja) * 2010-01-25 2011-08-04 Toyota Motor Corp 炭化珪素単結晶の欠陥検出方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05310349A (ja) * 1991-09-16 1993-11-22 Textil Mas Fab Dr Ernst Fehrer Ag 循環する無端保持帯上へ繊維束を載せる装置
JPH07335562A (ja) * 1994-06-10 1995-12-22 Hoya Corp 炭化珪素の成膜方法
JP2011151317A (ja) * 2010-01-25 2011-08-04 Toyota Motor Corp 炭化珪素単結晶の欠陥検出方法

Also Published As

Publication number Publication date
JPS6120516B2 (enrdf_load_stackoverflow) 1986-05-22

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