JPS55145365A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55145365A JPS55145365A JP5366779A JP5366779A JPS55145365A JP S55145365 A JPS55145365 A JP S55145365A JP 5366779 A JP5366779 A JP 5366779A JP 5366779 A JP5366779 A JP 5366779A JP S55145365 A JPS55145365 A JP S55145365A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- collector
- eliminate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the deterioration of a reverse withstanding voltage between the collector and the base of a semiconductor device when applying reverse voltage thereto and the increase of a leakage current thereof and to eliminate the occurrence of an improper mode thereof by forming a conductive ring region on the surface of a collector region through an insulating layer. CONSTITUTION:A p-type base region 2 is brought into contact with a collector region 1 made of an n-type semiconductor substrate, and an n-type emitter region 3 is formed further therein. Then, an insulating layer such as, for example, a silicon dioxide layer 4 is selectively etched to form electrodes 5-7. Thereafter, one or more concentric conductive ring-like regions 11 are so formed on the layer 4 as to surround the electrode 6. The region 11 thus formed isolates movable ions existed on the surface of the layer 4 via the region 11 when applying a reverse voltage thereto so as to eliminate the elongation of a space charge layer 9 to the vicinity of the electrode 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5366779A JPS55145365A (en) | 1979-05-01 | 1979-05-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5366779A JPS55145365A (en) | 1979-05-01 | 1979-05-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55145365A true JPS55145365A (en) | 1980-11-12 |
Family
ID=12949191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5366779A Pending JPS55145365A (en) | 1979-05-01 | 1979-05-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55145365A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4814963B1 (en) * | 1966-08-04 | 1973-05-11 |
-
1979
- 1979-05-01 JP JP5366779A patent/JPS55145365A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4814963B1 (en) * | 1966-08-04 | 1973-05-11 |
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