JPS55143072A - Manufacturing method of high dielectric strength insulation gate field-effect transistor - Google Patents
Manufacturing method of high dielectric strength insulation gate field-effect transistorInfo
- Publication number
- JPS55143072A JPS55143072A JP5190779A JP5190779A JPS55143072A JP S55143072 A JPS55143072 A JP S55143072A JP 5190779 A JP5190779 A JP 5190779A JP 5190779 A JP5190779 A JP 5190779A JP S55143072 A JPS55143072 A JP S55143072A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ion
- opening
- oxidized
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009413 insulation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5190779A JPS55143072A (en) | 1979-04-25 | 1979-04-25 | Manufacturing method of high dielectric strength insulation gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5190779A JPS55143072A (en) | 1979-04-25 | 1979-04-25 | Manufacturing method of high dielectric strength insulation gate field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55143072A true JPS55143072A (en) | 1980-11-08 |
Family
ID=12899939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5190779A Pending JPS55143072A (en) | 1979-04-25 | 1979-04-25 | Manufacturing method of high dielectric strength insulation gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143072A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02237159A (ja) * | 1989-03-10 | 1990-09-19 | Toshiba Corp | 半導体装置 |
-
1979
- 1979-04-25 JP JP5190779A patent/JPS55143072A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02237159A (ja) * | 1989-03-10 | 1990-09-19 | Toshiba Corp | 半導体装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1423183A (en) | Complemenatry field effect transistors | |
| JPS55160457A (en) | Semiconductor device | |
| EP0235705A3 (en) | Self-aligned ultra high-frequency field-effect transistor, and method for manufacturing the same | |
| JPS55143072A (en) | Manufacturing method of high dielectric strength insulation gate field-effect transistor | |
| JPS55132072A (en) | Mos semiconductor device | |
| EP0364818A3 (en) | Method for making a polysilicon transistor | |
| JPS56118349A (en) | Semiconductor device | |
| JPS56147466A (en) | Semiconductor device | |
| KR930010975B1 (ko) | 반도체장치의 제법 및 그 제법에 따른 반도체장치 | |
| JPS5780733A (en) | Manufacture of semiconductor device | |
| JPS56115570A (en) | Manufacture of semiconductor device | |
| JPS56152265A (en) | Manufacture of semiconductor device | |
| JPS5688362A (en) | Vertical type power mos transistor | |
| JPS55134974A (en) | Manufacturing of semiconductor device | |
| JPS5758365A (en) | Semiconductor device | |
| JPS6474758A (en) | Insulated gate field-effect transistor | |
| JPS5713766A (en) | Manufacture of insulated gate type field effect transistor | |
| JPS6461060A (en) | Semiconductor device | |
| JPS5736863A (ja) | Handotaisochinoseizohoho | |
| JPS6461059A (en) | Semiconductor device | |
| JPS5577173A (en) | Preparation of insulating gate-type electric field- effective transistor | |
| JPS5737882A (en) | Compound semiconductor device and production thereof | |
| JPS57109363A (en) | Semiconductor device | |
| JPS571259A (en) | Manufacture of semiconductor device | |
| JPS57211779A (en) | Field effect transistor |