JPS55140272A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55140272A
JPS55140272A JP4614280A JP4614280A JPS55140272A JP S55140272 A JPS55140272 A JP S55140272A JP 4614280 A JP4614280 A JP 4614280A JP 4614280 A JP4614280 A JP 4614280A JP S55140272 A JPS55140272 A JP S55140272A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4614280A
Other languages
English (en)
Japanese (ja)
Inventor
Samiyueru Heuitsuto Baato
Pooru Toomasu Robaato
Maikeru Hiirii Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS55140272A publication Critical patent/JPS55140272A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Junction Field-Effect Transistors (AREA)
JP4614280A 1979-04-09 1980-04-08 Semiconductor device Pending JPS55140272A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2842179A 1979-04-09 1979-04-09

Publications (1)

Publication Number Publication Date
JPS55140272A true JPS55140272A (en) 1980-11-01

Family

ID=21843361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4614280A Pending JPS55140272A (en) 1979-04-09 1980-04-08 Semiconductor device

Country Status (5)

Country Link
JP (1) JPS55140272A (de)
DE (1) DE3013196A1 (de)
FR (1) FR2454185A1 (de)
GB (1) GB2046514A (de)
IT (1) IT8048031A0 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778655U (de) * 1980-10-30 1982-05-15
JPS6432681A (en) * 1987-07-28 1989-02-02 Mitsubishi Electric Corp Semiconductor device

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US4531145A (en) * 1980-08-04 1985-07-23 Fine Particle Technology Corporation Method of fabricating complex micro-circuit boards and substrates and substrate
FR2505094A1 (fr) * 1981-04-29 1982-11-05 Trt Telecom Radio Electr Procede de realisation des circuits hyperfrequences
FR2507409B1 (fr) * 1981-06-03 1985-09-13 Radiotechnique Compelec Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ
FR2516311B1 (fr) * 1981-11-06 1985-10-11 Thomson Csf Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle
FR2554275B1 (fr) * 1983-10-26 1986-09-05 Radiotechnique Compelec Dispositif de connexion pour un semi-conducteur de puissance
FR2565030B1 (fr) * 1984-05-25 1986-08-22 Thomson Csf Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure
IT1175541B (it) * 1984-06-22 1987-07-01 Telettra Lab Telefon Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US4800420A (en) * 1987-05-14 1989-01-24 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
DE3718684A1 (de) * 1987-06-04 1988-12-22 Licentia Gmbh Halbleiterkoerper
US5051811A (en) * 1987-08-31 1991-09-24 Texas Instruments Incorporated Solder or brazing barrier
US4925723A (en) * 1988-09-29 1990-05-15 Microwave Power, Inc. Microwave integrated circuit substrate including metal filled via holes and method of manufacture
DE3843787A1 (de) * 1988-12-24 1990-07-05 Standard Elektrik Lorenz Ag Verfahren und leiterplatte zum montieren eines halbleiter-bauelements
DE4135654A1 (de) * 1991-10-29 2003-03-27 Lockheed Corp Dichtgepackte Verbindungsstruktur, die eine Abstandshalterstruktur und einen Zwischenraum enthält
JPH06244216A (ja) * 1992-12-21 1994-09-02 Mitsubishi Electric Corp Ｉｐｇトランジスタ及びその製造方法，並びに半導体集積回路装置及びその製造方法
US5703405A (en) * 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
WO1996013062A1 (en) * 1994-10-19 1996-05-02 Ceram Incorporated Apparatus and method of manufacturing stacked wafer array
US6331722B1 (en) 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
SE515158C2 (sv) * 1999-02-10 2001-06-18 Ericsson Telefon Ab L M Halvledaranordning med jordanslutning via en ej genomgående plugg
EP1739736A1 (de) 2005-06-30 2007-01-03 Interuniversitair Microelektronica Centrum ( Imec) Verfahren zur Herstellung einer Halbleiteranordnung
EP1693891B1 (de) * 2005-01-31 2019-07-31 IMEC vzw Verfahren zur herstellung einer halbleiteranordnung
CN107980171B (zh) * 2016-12-23 2022-06-24 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法

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FR1524053A (fr) * 1951-01-28 1968-05-10 Telefunken Patent Circuit à corps solides constitués par une masse semi-conductrice comprenant des composants actifs incorporés et par une couche isolante comprenant des composants passifs, ainsi que par des conducteurs rapportés
FR1486855A (de) * 1965-07-17 1967-10-05
DE1933731C3 (de) * 1968-07-05 1982-03-25 Honeywell Information Systems Italia S.p.A., Caluso, Torino Verfahren zum Herstellen einer integrierten Halbleiterschaltung
US3648131A (en) * 1969-11-07 1972-03-07 Ibm Hourglass-shaped conductive connection through semiconductor structures
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778655U (de) * 1980-10-30 1982-05-15
JPS6432681A (en) * 1987-07-28 1989-02-02 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
FR2454185A1 (fr) 1980-11-07
IT8048031A0 (it) 1980-02-28
GB2046514A (en) 1980-11-12
DE3013196A1 (de) 1980-10-30

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